Dielectric tunability and magnetoelectric coupling in LuFe2O4 epitaxial thin film deposited by pulsed-laser deposition

被引:10
作者
Zeng, M. [1 ,2 ]
Liu, J. [1 ]
Qin, Y. B. [3 ]
Yang, H. X. [3 ]
Li, J. Q. [3 ]
Dai, J. Y. [1 ]
机构
[1] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
[2] S China Normal Univ, Sch Phys & Telecommun Engn, Inst Adv Mat, Guangzhou 510006, Guangdong, Peoples R China
[3] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
基金
美国国家科学基金会;
关键词
Magnetoelectric coupling; Dielectric tunability; Charge-Ordering; Multiferroics; Pulsed-laser deposition; X-ray diffraction; Lutetium ferrite; ROOM-TEMPERATURE; SYSTEM LUFE2O4; CHARGE; MAGNETORESISTANCE; OXIDES;
D O I
10.1016/j.tsf.2012.06.058
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
C-axis orientated LuFe2O4 thin films on (001) sapphire substrates are epitaxially deposited by pulsed-laser deposition. Temperature-dependent resistance characterization reveals the ferrimagnetic transition at 237K and charge-ordering transition at 340K in the film. Importantly, the dielectric constant of the film can be significantly changed by both electric and magnetic fields. The dielectric tunability reaches 35% when an electric field of 5V is applied, while this value reduces to 20% and 15%, respectively, when a magnetic field of 0.83T is applied perpendicular and parallel to the film normal direction. This suggests a magnetically controlled dielectric tunability and strong magnetoelectric coupling, and is therefore promising for tunable device applications in film form. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:6446 / 6449
页数:4
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