Microstructures and thermoelectric properties of p-type Bi x Sb2-x Te3 thin films with various compositions

被引：11

作者：

Song, Junqiang ^{[1
]}

Yao, Qin ^{[1
]}

Wu, Ting ^{[1
]}

Shi, Xun ^{[1
]}

Chen, Lidong ^{[1
]}

机构：

[1] Chinese Acad Sci, CAS Key Lab Mat Energy Convers, Shanghai Inst Ceram, Shanghai 200050, Peoples R China

来源：

ELECTRONIC MATERIALS LETTERS | 2013年 / 9卷 / 06期

基金：

中国国家自然科学基金;

关键词：

thermoelectric; Bi-Sb-Te; thin film; co-sputtering; FLASH EVAPORATION METHOD; BULK ALLOYS; FABRICATION; PERFORMANCE; CRYSTALS; DEVICES; MERIT;

D O I：

10.1007/s13391-013-3081-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the present study, p-type Bi (x) Sb2-x Te-3 thermoelectric thin films with various chemical compositions were fabricated by a magnetron co-sputtering process. The influence of Bi content (x) on the microstructures and thermoelectric properties of Bi (x) Sb2-x Te-3 films was investigated. It was found that the grain size of nanocrystalline Bi (x) Sb2-x Te-3 films decreased when increasing the Bi content from x = 0 to x = 0.57, which resulted in a concurrent decrease in the carrier mobility. Similarly, carrier concentration decreased with increasing Bi content, which caused an increase in the Seebeck coefficient. The largest room-temperature power factor reached 31.3 A mu WK(-2)cm(-1) for the film with x = 0.45.

引用

页码：709 / 713

页数：5

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