Luminescence properties of Zn nanowires prepared by electrochemical etching

被引:99
|
作者
Chang, SS [1 ]
Yoon, SO
Park, HJ
Sakai, A
机构
[1] Kangnung Natl Univ, Dept Ceram Engn, Kangnung 210702, Kangwon Do, South Korea
[2] Hankuk Univ Foreign Studies, Fac Nat Sci, Seoul 130791, South Korea
[3] Kyoto Univ, Fac Engn, Mesoscop Mat Res Ctr, Sakyo Ku, Kyoto 60601, Japan
关键词
ultraviolet emission; nanowires; photoluminescence; ZnO;
D O I
10.1016/S0167-577X(01)00521-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have prepared samples of Zn wire structures by electrochemical anodization and measured their photoluminescence spectra at various temperatures. Scanning electron micrographs (SEM) were also taken on these samples. It was found that the dimension of the Zn wires has a definite influence on the photoluminescence (PL) spectra. Specifically, large wire dimensions exhibit a blue/violet luminescence. In addition to this blue/violet luminescence. nanowires of Zn about 20 nm in diameter exhibit a PL peak at 379 nm, which is the characteristic of ZnO. Low-temperature PL measurements on these Zn nanowires reveal three distinct excitonic emission peaks similar to high-quality ZnO. These results strongly suggest that high-quality ZnO nanowires can be formed by electrochemical etching of Zn. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:432 / 436
页数:5
相关论文
共 50 条
  • [21] Gas sensing properties of zinc stannate (Zn2SnO4) nanowires prepared by carbon, assisted thermal evaporation process
    Tharsika, T.
    Haseeb, A. S. M. A.
    Akbar, S. A.
    Sabri, M. F. M.
    Wong, Y. H.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 618 : 455 - 462
  • [22] Tunable luminescence of pure ZnO nanowires prepared by microwave irradiation in ethanol
    Karimipour, Masoud
    Molaei, Mehdi
    Allahyar, Soheil
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 27 (05) : 4771 - 4776
  • [23] Morphological and nanostructural features of porous silicon prepared by electrochemical etching
    Kim, Hyohan
    Cho, Namhee
    NANOSCALE RESEARCH LETTERS, 2012, 7 : 1 - 8
  • [24] Morphological and nanostructural features of porous silicon prepared by electrochemical etching
    Hyohan Kim
    Namhee Cho
    Nanoscale Research Letters, 7
  • [25] Fabrication Characteristics of Silicon Nanowires via the Electrochemical Electroless Etching Method
    Kang, ByeongSu
    Jeong, Chae Hwan
    Kim, Changheon
    Kim, Min-Young
    Choi, Bum Ho
    Lee, Moo Sung
    Kim, Ho-Sung
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2015, 15 (07) : 5291 - 5294
  • [26] Photoluminescence study of ZnO nanowires with Zn residue
    Kshirsagar, Sachin D.
    Shaik, Ummar Pasha
    Krishna, M. Ghanashyam
    Tewari, Surya P.
    JOURNAL OF LUMINESCENCE, 2013, 136 : 26 - 31
  • [27] Decisive role of dopants in the optical properties of vertically aligned silicon nanowires prepared by metal-assist chemical etching
    Cong, Le Thanh
    Lam, Nguyen Thi Ngoc
    Van Thuong, Doan
    Ha, Ngo Ngoc
    Dung, Nguyen Duc
    Dung, Dang Viet Anh
    Giang, Ho Truong
    Vu, Xuan Thang
    OPTICAL MATERIALS, 2021, 121
  • [28] N-type silicon nanowires prepared by silver metal-assisted chemical etching: Fabrication and optical properties
    Le Thanh Cong
    Nguyen Thi Ngoc Lam
    Nguyen Truong Giang
    Pham The Kien
    Nguyen Duc Dung
    Ngo Ngoc Ha
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 90 : 198 - 204
  • [29] Structural characterization and photoluminescence properties of SiC nanowires prepared by microwave method
    Huang Shan
    Wang Ji-gang
    Liu Song
    Zhang Yue-chen
    Qian Liu
    Liang Jie
    NEW CARBON MATERIALS, 2015, 30 (03) : 230 - 235
  • [30] Zn3N2 nanowires: growth, properties and oxidation
    Zervos, Matthew
    Karipi, Chrystalla
    Othonos, Andreas
    NANOSCALE RESEARCH LETTERS, 2013, 8 : 1 - 6