共 21 条
Luminescence properties of Zn nanowires prepared by electrochemical etching
被引:100
作者:

Chang, SS
论文数: 0 引用数: 0
h-index: 0
机构:
Kangnung Natl Univ, Dept Ceram Engn, Kangnung 210702, Kangwon Do, South Korea Kangnung Natl Univ, Dept Ceram Engn, Kangnung 210702, Kangwon Do, South Korea

Yoon, SO
论文数: 0 引用数: 0
h-index: 0
机构: Kangnung Natl Univ, Dept Ceram Engn, Kangnung 210702, Kangwon Do, South Korea

论文数: 引用数:
h-index:
机构:

Sakai, A
论文数: 0 引用数: 0
h-index: 0
机构: Kangnung Natl Univ, Dept Ceram Engn, Kangnung 210702, Kangwon Do, South Korea
机构:
[1] Kangnung Natl Univ, Dept Ceram Engn, Kangnung 210702, Kangwon Do, South Korea
[2] Hankuk Univ Foreign Studies, Fac Nat Sci, Seoul 130791, South Korea
[3] Kyoto Univ, Fac Engn, Mesoscop Mat Res Ctr, Sakyo Ku, Kyoto 60601, Japan
关键词:
ultraviolet emission;
nanowires;
photoluminescence;
ZnO;
D O I:
10.1016/S0167-577X(01)00521-3
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
We have prepared samples of Zn wire structures by electrochemical anodization and measured their photoluminescence spectra at various temperatures. Scanning electron micrographs (SEM) were also taken on these samples. It was found that the dimension of the Zn wires has a definite influence on the photoluminescence (PL) spectra. Specifically, large wire dimensions exhibit a blue/violet luminescence. In addition to this blue/violet luminescence. nanowires of Zn about 20 nm in diameter exhibit a PL peak at 379 nm, which is the characteristic of ZnO. Low-temperature PL measurements on these Zn nanowires reveal three distinct excitonic emission peaks similar to high-quality ZnO. These results strongly suggest that high-quality ZnO nanowires can be formed by electrochemical etching of Zn. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:432 / 436
页数:5
相关论文
共 21 条
[1]
LUMINESCENCE OF HETEROEPITAXIAL ZINC-OXIDE
[J].
BETHKE, S
;
PAN, H
;
WESSELS, BW
.
APPLIED PHYSICS LETTERS,
1988, 52 (02)
:138-140

BETHKE, S
论文数: 0 引用数: 0
h-index: 0
机构:
NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208 NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208

PAN, H
论文数: 0 引用数: 0
h-index: 0
机构:
NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208 NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208

WESSELS, BW
论文数: 0 引用数: 0
h-index: 0
机构:
NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208 NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208
[2]
OPTICAL AND ELECTRICAL-PROPERTIES OF RADICAL BEAM GETTERING EPITAXY GROWN N-TYPE AND P-TYPE ZNO SINGLE-CRYSTALS
[J].
BUTKHUZI, TV
;
BUREYEV, AV
;
GEORGOBIANI, AN
;
KEKELIDZE, NP
;
KHULORDAVA, TG
.
JOURNAL OF CRYSTAL GROWTH,
1992, 117 (1-4)
:366-369

BUTKHUZI, TV
论文数: 0 引用数: 0
h-index: 0
机构: P.N. Lebedev Physical Institute, Academy of Sciences of the USSR Leninsky Prospect 53, Moscow

BUREYEV, AV
论文数: 0 引用数: 0
h-index: 0
机构: P.N. Lebedev Physical Institute, Academy of Sciences of the USSR Leninsky Prospect 53, Moscow

GEORGOBIANI, AN
论文数: 0 引用数: 0
h-index: 0
机构: P.N. Lebedev Physical Institute, Academy of Sciences of the USSR Leninsky Prospect 53, Moscow

KEKELIDZE, NP
论文数: 0 引用数: 0
h-index: 0
机构: P.N. Lebedev Physical Institute, Academy of Sciences of the USSR Leninsky Prospect 53, Moscow

KHULORDAVA, TG
论文数: 0 引用数: 0
h-index: 0
机构: P.N. Lebedev Physical Institute, Academy of Sciences of the USSR Leninsky Prospect 53, Moscow
[3]
Luminescence properties of anodically etched porous Zn
[J].
Chang, SS
;
Yoon, SO
;
Park, HJ
;
Sakai, A
.
APPLIED SURFACE SCIENCE,
2000, 158 (3-4)
:330-334

Chang, SS
论文数: 0 引用数: 0
h-index: 0
机构:
Kangnung Natl Univ, Dept Ceram Engn, Kangwondo 210702, Kangnung, South Korea Kangnung Natl Univ, Dept Ceram Engn, Kangwondo 210702, Kangnung, South Korea

Yoon, SO
论文数: 0 引用数: 0
h-index: 0
机构: Kangnung Natl Univ, Dept Ceram Engn, Kangwondo 210702, Kangnung, South Korea

论文数: 引用数:
h-index:
机构:

Sakai, A
论文数: 0 引用数: 0
h-index: 0
机构: Kangnung Natl Univ, Dept Ceram Engn, Kangwondo 210702, Kangnung, South Korea
[4]
Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy
[J].
Hamdani, F
;
Yeadon, M
;
Smith, DJ
;
Tang, H
;
Kim, W
;
Salvador, A
;
Botchkarev, AE
;
Gibson, JM
;
Polyakov, AY
;
Skowronski, M
;
Morkoc, H
.
JOURNAL OF APPLIED PHYSICS,
1998, 83 (02)
:983-990

Hamdani, F
论文数: 0 引用数: 0
h-index: 0
机构: Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA

Yeadon, M
论文数: 0 引用数: 0
h-index: 0
机构: Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA

Smith, DJ
论文数: 0 引用数: 0
h-index: 0
机构: Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA

Tang, H
论文数: 0 引用数: 0
h-index: 0
机构: Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA

Kim, W
论文数: 0 引用数: 0
h-index: 0
机构: Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA

Salvador, A
论文数: 0 引用数: 0
h-index: 0
机构: Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA

Botchkarev, AE
论文数: 0 引用数: 0
h-index: 0
机构: Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA

Gibson, JM
论文数: 0 引用数: 0
h-index: 0
机构: Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA

Polyakov, AY
论文数: 0 引用数: 0
h-index: 0
机构: Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA

论文数: 引用数:
h-index:
机构:

Morkoc, H
论文数: 0 引用数: 0
h-index: 0
机构: Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA
[5]
Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy
[J].
Hamdani, F
;
Botchkarev, A
;
Kim, W
;
Morkoc, H
;
Yeadon, M
;
Gibson, JM
;
Tsen, SCY
;
Smith, DJ
;
Evans, K
;
Litton, CW
;
Mitchel, WC
;
Hemenger, P
.
APPLIED PHYSICS LETTERS,
1997, 70 (04)
:467-469

Hamdani, F
论文数: 0 引用数: 0
h-index: 0
机构: UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

Botchkarev, A
论文数: 0 引用数: 0
h-index: 0
机构: UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

Kim, W
论文数: 0 引用数: 0
h-index: 0
机构: UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

Morkoc, H
论文数: 0 引用数: 0
h-index: 0
机构: UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

Yeadon, M
论文数: 0 引用数: 0
h-index: 0
机构: UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

Gibson, JM
论文数: 0 引用数: 0
h-index: 0
机构: UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

Tsen, SCY
论文数: 0 引用数: 0
h-index: 0
机构: UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

Smith, DJ
论文数: 0 引用数: 0
h-index: 0
机构: UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

Evans, K
论文数: 0 引用数: 0
h-index: 0
机构: UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

Litton, CW
论文数: 0 引用数: 0
h-index: 0
机构: UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

Mitchel, WC
论文数: 0 引用数: 0
h-index: 0
机构: UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

Hemenger, P
论文数: 0 引用数: 0
h-index: 0
机构: UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[6]
SIZE-DEPENDENT REDOX POTENTIALS OF QUANTIZED ZINC-OXIDE MEASURED WITH AN OPTICALLY TRANSPARENT THIN-LAYER ELECTRODE
[J].
HOYER, P
;
WELLER, H
.
CHEMICAL PHYSICS LETTERS,
1994, 221 (5-6)
:379-384

HOYER, P
论文数: 0 引用数: 0
h-index: 0
机构: Hahn-Meitner-Institut, Department of Small Particle Research, D-14109 Berlin

WELLER, H
论文数: 0 引用数: 0
h-index: 0
机构: Hahn-Meitner-Institut, Department of Small Particle Research, D-14109 Berlin
[7]
Characterization of transparent zinc oxide films prepared by electrochemical reaction
[J].
Izaki, M
;
Omi, T
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1997, 144 (06)
:1949-1952

Izaki, M
论文数: 0 引用数: 0
h-index: 0
机构:
UNIV OSAKA PREFECTURE,COLL ENGN,SAKAI,OSAKA 593,JAPAN UNIV OSAKA PREFECTURE,COLL ENGN,SAKAI,OSAKA 593,JAPAN

Omi, T
论文数: 0 引用数: 0
h-index: 0
机构:
UNIV OSAKA PREFECTURE,COLL ENGN,SAKAI,OSAKA 593,JAPAN UNIV OSAKA PREFECTURE,COLL ENGN,SAKAI,OSAKA 593,JAPAN
[8]
MBE growth and properties of ZnO on sapphire and SiC substrates
[J].
Johnson, MAL
;
Fujita, S
;
Rowland, WH
;
Hughes, WC
;
Cook, JW
;
Schetzina, JF
.
JOURNAL OF ELECTRONIC MATERIALS,
1996, 25 (05)
:855-862

Johnson, MAL
论文数: 0 引用数: 0
h-index: 0
机构:
KYOTO UNIV,DEPT ELECTR SCI & ENGN,KYOTO 60601,JAPAN KYOTO UNIV,DEPT ELECTR SCI & ENGN,KYOTO 60601,JAPAN

Fujita, S
论文数: 0 引用数: 0
h-index: 0
机构:
KYOTO UNIV,DEPT ELECTR SCI & ENGN,KYOTO 60601,JAPAN KYOTO UNIV,DEPT ELECTR SCI & ENGN,KYOTO 60601,JAPAN

Rowland, WH
论文数: 0 引用数: 0
h-index: 0
机构:
KYOTO UNIV,DEPT ELECTR SCI & ENGN,KYOTO 60601,JAPAN KYOTO UNIV,DEPT ELECTR SCI & ENGN,KYOTO 60601,JAPAN

Hughes, WC
论文数: 0 引用数: 0
h-index: 0
机构:
KYOTO UNIV,DEPT ELECTR SCI & ENGN,KYOTO 60601,JAPAN KYOTO UNIV,DEPT ELECTR SCI & ENGN,KYOTO 60601,JAPAN

Cook, JW
论文数: 0 引用数: 0
h-index: 0
机构:
KYOTO UNIV,DEPT ELECTR SCI & ENGN,KYOTO 60601,JAPAN KYOTO UNIV,DEPT ELECTR SCI & ENGN,KYOTO 60601,JAPAN

Schetzina, JF
论文数: 0 引用数: 0
h-index: 0
机构:
KYOTO UNIV,DEPT ELECTR SCI & ENGN,KYOTO 60601,JAPAN KYOTO UNIV,DEPT ELECTR SCI & ENGN,KYOTO 60601,JAPAN
[9]
Electrical and optical properties of ZnO:Al films prepared by an evaporation method
[J].
Ma, J
;
Ji, F
;
Ma, HL
;
Li, SY
.
THIN SOLID FILMS,
1996, 279 (1-2)
:213-215

Ma, J
论文数: 0 引用数: 0
h-index: 0
机构: Inst. Optoelectron. Mat. and Devices, Shandong University, Jinan

Ji, F
论文数: 0 引用数: 0
h-index: 0
机构: Inst. Optoelectron. Mat. and Devices, Shandong University, Jinan

Ma, HL
论文数: 0 引用数: 0
h-index: 0
机构: Inst. Optoelectron. Mat. and Devices, Shandong University, Jinan

Li, SY
论文数: 0 引用数: 0
h-index: 0
机构: Inst. Optoelectron. Mat. and Devices, Shandong University, Jinan
[10]
ZINC-OXIDE THIN-FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITION FROM ZINC ACETATE
[J].
MARUYAMA, T
;
SHIONOYA, J
.
JOURNAL OF MATERIALS SCIENCE LETTERS,
1992, 11 (03)
:170-172

MARUYAMA, T
论文数: 0 引用数: 0
h-index: 0
机构: Department of Chemical Engineering, Faculty of Enginering, Kyoto University, Kyoto

SHIONOYA, J
论文数: 0 引用数: 0
h-index: 0
机构: Department of Chemical Engineering, Faculty of Enginering, Kyoto University, Kyoto