Luminescence properties of Zn nanowires prepared by electrochemical etching

被引:99
|
作者
Chang, SS [1 ]
Yoon, SO
Park, HJ
Sakai, A
机构
[1] Kangnung Natl Univ, Dept Ceram Engn, Kangnung 210702, Kangwon Do, South Korea
[2] Hankuk Univ Foreign Studies, Fac Nat Sci, Seoul 130791, South Korea
[3] Kyoto Univ, Fac Engn, Mesoscop Mat Res Ctr, Sakyo Ku, Kyoto 60601, Japan
关键词
ultraviolet emission; nanowires; photoluminescence; ZnO;
D O I
10.1016/S0167-577X(01)00521-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have prepared samples of Zn wire structures by electrochemical anodization and measured their photoluminescence spectra at various temperatures. Scanning electron micrographs (SEM) were also taken on these samples. It was found that the dimension of the Zn wires has a definite influence on the photoluminescence (PL) spectra. Specifically, large wire dimensions exhibit a blue/violet luminescence. In addition to this blue/violet luminescence. nanowires of Zn about 20 nm in diameter exhibit a PL peak at 379 nm, which is the characteristic of ZnO. Low-temperature PL measurements on these Zn nanowires reveal three distinct excitonic emission peaks similar to high-quality ZnO. These results strongly suggest that high-quality ZnO nanowires can be formed by electrochemical etching of Zn. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:432 / 436
页数:5
相关论文
共 50 条
  • [1] Luminescence properties of Ammonium Silicon Fluoride films prepared by vapour etching technique
    Yilmaz, M.
    Kabacelik, I.
    Cicek, A.
    Ulug, A.
    Ulug, B.
    THIN SOLID FILMS, 2009, 518 (01) : 49 - 54
  • [2] Size effects on the luminescence properties of polymer nanowires
    Sun, Xiu-yu
    Liu, Xiang-lan
    Xu, Fa-qiang
    Xue, Li
    Cheng, Ying-zhi
    CHINESE JOURNAL OF POLYMER SCIENCE, 2014, 32 (02) : 130 - 136
  • [3] Photoluminescence properties of polymethyl methacrylate-coated Zn2SnO4 nanowires
    Park, Sunghoon
    Kim, Soohyun
    Choi, Seungbok
    Lee, Sangmin
    Lee, Chongmu
    THIN SOLID FILMS, 2015, 591 : 336 - 340
  • [4] Effect of doping on structural and luminescence properties of AlN nanowires
    Aghdaie, A.
    Haratizadeh, H.
    Mousavi, S. H.
    Mohammadi, S. A. Jafari
    de Oliveira, P. W.
    CERAMICS INTERNATIONAL, 2015, 41 (02) : 2917 - 2922
  • [5] Optical properties of mesoporous 4H-SiC prepared by anodic electrochemical etching
    Rashid, Marzaini
    Horrocks, B. R.
    Healy, N.
    Goss, J. P.
    Horsfall, A. B.
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (19)
  • [6] Structural, vibrational and luminescence properties of longitudinal twinning Zn2GeO4 nanowires
    Xu, Jing
    Wang, Chunrui
    Zhang, Yao
    Liu, Xu
    Liu, Xiaoyun
    Huang, Shenyang
    Chen, Xiaoshuang
    CRYSTENGCOMM, 2013, 15 (04): : 764 - 768
  • [7] Optical properties of US nanowires prepared by dc electrochemical deposition in porous alumina template
    Mondal, S. P.
    Dhar, A.
    Ray, S. K.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2007, 10 (4-5) : 185 - 193
  • [8] Oxidation of MBE-Grown ZnTe and ZnTe/Zn Nanowires and Their Structural Properties
    Gas, Katarzyna
    Kret, Slawomir
    Zaleszczyk, Wojciech
    Kaminska, Eliana
    Sawicki, Maciej
    Wojtowicz, Tomasz
    Szuszkiewicz, Wojciech
    MATERIALS, 2021, 14 (18)
  • [9] Electrochemical synthesis and laser induced time resolved luminescence behaviour of CdSe nanowires
    Kumar, Sunil
    Kumar, Sanjeev
    Verma, N. K.
    Chakarvarti, S. K.
    Sharma, J. K.
    DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 2008, 3 (04) : 199 - 202
  • [10] SYNTHESIS, STRUCTURE, AND LUMINESCENCE PROPERTIES OF ZnSnO3 NANOWIRES
    An, Soyeon
    Jin, Changhyun
    Kim, Hyunsu
    Lee, Sangmin
    Jeong, Bongyong
    Lee, Chongmu
    NANO, 2012, 7 (02)