Mathematical Model of the Formation of a Crystallographic Shear Band in fcc Metals Taking Account for Elastic Interaction of Dislocations

被引：4

作者：

Petelin, A. E. ^{[1
,2
]}

Samokhina, S. I. ^{[2
]}

Kolupaeva, S. N. ^{[1
]}

机构：

[1] Tomsk State Univ Architecture & Bldg, Tomsk, Russia

[2] Natl Res Tomsk State Univ, Tomsk, Russia

来源：

RUSSIAN PHYSICS JOURNAL | 2013年 / 56卷 / 08期

关键词：

interaction of dislocations; crystallographic slip; dislocation pileup; fcc materials; mathematical modeling; OBSTACLES;

D O I：

10.1007/s11182-013-0123-4

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A mathematical model is proposed to describe the dislocation dynamics during the formation of a crystallographic shear band in metals with fcc structure taking into account elastic interaction of dislocations. The scale, energy, and time characteristics of the formation of a shear band at room temperature have been investigated for copper, aluminum, and lead.

引用

页码：953 / 958

页数：6

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