Migration of subsurface self-interstitial atoms of the Ge(113) surface and the energy barrier

被引:9
作者
Gai, Z
Zhao, RG
Yang, WS
机构
[1] BEIJING UNIV,MESOSCOP PHYS LAB,BEIJING 100871,PEOPLES R CHINA
[2] BEIJING UNIV,DEPT PHYS,BEIJING 100871,PEOPLES R CHINA
来源
PHYSICAL REVIEW B | 1997年 / 56卷 / 19期
关键词
D O I
10.1103/PhysRevB.56.12303
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
It has been pointed out very recently that in each (3 x 2) unit cell of the Ge(113) surface, similar to the Si(113) surface, there is a subsurface self-interstitial atom. In the present paper we have observed with scanning tunneling microscopy that such interstitial atoms of clean and well-annealed Ge(113) surfaces migrate frequently even at room temperature. The energy barrier of the migration has been determined to be 0.93 +/- 0.02 eV from the measured rate of the migration, if the migration is a simple thermally activated process and an attempt frequency of 10(13) Hz is used.
引用
收藏
页码:12303 / 12307
页数:5
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