Texture formation in Ag thin films: Effect of W-Ti diffusion barriers

被引:3
作者
Bhagat, S. K. [1 ]
Alford, T. L. [1 ]
机构
[1] Arizona State Univ, Sch Mat, Tempe, AZ 85287 USA
基金
美国国家科学基金会;
关键词
annealing; diffusion barriers; elemental semiconductors; field emission electron microscopy; grain growth; metallic thin films; MIS structures; scanning electron microscopy; silicon; silicon compounds; silver; texture; titanium alloys; tungsten alloys; twinning; X-ray diffraction;
D O I
10.1063/1.3028233
中图分类号
O59 [应用物理学];
学科分类号
摘要
Pure Ag films were deposited on SiO2/Si with and without introduction of W0.7Ti0.3 barrier layers. The films were annealed in vacuum for 1 h at temperatures up to 650 degrees C. X-ray diffraction pole figure analysis was used to investigate the texture information in as-deposited and annealed films. After annealing, the {111} texture in Ag films increased; however, the degree of increase was significantly higher in Ag/W-Ti/SiO2. In Ag/SiO2 structures, the {200} texture also increased. In Ag/W-Ti/SiO2 structures, no significant increase in {200} texture was observed; however, {111} twin related {511} texture evolved. In as-deposited samples, {111} pole figure revealed that {111} absolute intensity was higher in Ag/SiO2 than in Ag/W-Ti/SiO2. After annealing, Ag {111} intensity was always higher in Ag/W-Ti/SiO2. Sources for the texture evolution were discussed in detail. Field emission scanning electron microscope showed the presence of twins and abnormal grain growth. After annealing at 650 degrees C, both the roughness and resistivity of Ag increased significantly.
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页数:5
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共 26 条
  • [1] Stability of silver thin films on various underlying layers at elevated temperatures
    Alford, TL
    Chen, LH
    Gadre, KS
    [J]. THIN SOLID FILMS, 2003, 429 (1-2) : 248 - 254
  • [2] TITANIUM-TUNGSTEN CONTACTS TO SI - THE EFFECTS OF ALLOYING ON SCHOTTKY CONTACT AND ON SILICIDE FORMATION
    BABCOCK, SE
    TU, KN
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6898 - 6905
  • [3] Stresses in Al/TiW/Si(100) contacts during thermal cycling
    Berger, S
    Raslin, O
    [J]. THIN SOLID FILMS, 1998, 333 (1-2) : 264 - 271
  • [4] Al/TixW1-x metal/diffusion-barrier bilayers: Interfacial reaction pathways and kinetics during annealing
    Bergstrom, DB
    Petrov, I
    Greene, JE
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) : 2312 - 2322
  • [5] Thermal stability of tungsten-titanium diffusion barriers for silver metallization
    Bhagat, S. K.
    Theodore, N. D.
    Alford, T. L.
    [J]. THIN SOLID FILMS, 2008, 516 (21) : 7451 - 7457
  • [6] Tungsten-titanium diffusion barriers for silver metallization
    Bhagat, Shekhar
    Han, Hauk
    Alford, T. L.
    [J]. THIN SOLID FILMS, 2006, 515 (04) : 1998 - 2002
  • [7] Ti concentration effect on adhesive energy at Cu/TiW interface
    Furuya, A
    Ohshita, Y
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (09) : 4941 - 4944
  • [8] Scaling properties and electromigration resistance of sputtered Ag metallization lines
    Hauder, M
    Gstöttner, J
    Hansch, W
    Schmitt-Landsiedel, D
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (06) : 838 - 840
  • [9] Effect of a Ta-Si-N diffusion barrier on the texture formation in thin Cu films
    Huebner, R.
    [J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (09)
  • [10] Comparison of texture evolution in Ag and Ag(Al) alloy thin films on amorphous SiO2
    Kim, HC
    Theodore, ND
    Alford, TL
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 95 (09) : 5180 - 5188