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Texture formation in Ag thin films: Effect of W-Ti diffusion barriers
被引:3
作者:
Bhagat, S. K.
[1
]
Alford, T. L.
[1
]
机构:
[1] Arizona State Univ, Sch Mat, Tempe, AZ 85287 USA
基金:
美国国家科学基金会;
关键词:
annealing;
diffusion barriers;
elemental semiconductors;
field emission electron microscopy;
grain growth;
metallic thin films;
MIS structures;
scanning electron microscopy;
silicon;
silicon compounds;
silver;
texture;
titanium alloys;
tungsten alloys;
twinning;
X-ray diffraction;
D O I:
10.1063/1.3028233
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Pure Ag films were deposited on SiO2/Si with and without introduction of W0.7Ti0.3 barrier layers. The films were annealed in vacuum for 1 h at temperatures up to 650 degrees C. X-ray diffraction pole figure analysis was used to investigate the texture information in as-deposited and annealed films. After annealing, the {111} texture in Ag films increased; however, the degree of increase was significantly higher in Ag/W-Ti/SiO2. In Ag/SiO2 structures, the {200} texture also increased. In Ag/W-Ti/SiO2 structures, no significant increase in {200} texture was observed; however, {111} twin related {511} texture evolved. In as-deposited samples, {111} pole figure revealed that {111} absolute intensity was higher in Ag/SiO2 than in Ag/W-Ti/SiO2. After annealing, Ag {111} intensity was always higher in Ag/W-Ti/SiO2. Sources for the texture evolution were discussed in detail. Field emission scanning electron microscope showed the presence of twins and abnormal grain growth. After annealing at 650 degrees C, both the roughness and resistivity of Ag increased significantly.
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