Activation energy for surface diffusion in GaInNAs quantum wells

被引：0
|
作者：
Herrera, M. [1 ]
Gonzalez, D. [1 ]
Lozano, J. G. [1 ]
Hopkinson, M. [1 ]
Gutierrez, M. [1 ]
Navaretti, P. [1 ]
Liu, H. Y. [1 ]
Garcia, R. [1 ]
机构：
[1] Univ Cadiz, Dept Ciencia Mat & IM & QI, E-11510 Puerto Real, Cadiz, Spain
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS | 2005年 / 107卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The analysis by transmission electron microscopy of GaInNAs/GaAs(001) quantum wells grown at different temperatures in the range 375-420 degrees C is reported. Our results with the 220BF reflection have shown the existence of periodic strain contrasts in all the wells, associated with composition fluctuations in the alloy. These contrasts are more pronounced with increasing growth temperature, revealing a kinetic limitation for the formation of the phase separation. With the theoretical equation proposed by Cahn and the amplitude of the intensity profiles taken from 220BF micrographs, the activation energy for surface diffusion in GalnNAs is calculated.
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页码：279 / 282
页数：4
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