Laser Liftoff GaN Thin-Film Photonic Crystal GaN-Based Light-Emitting Diodes

被引：58

作者：

Cho, Hyun Kyong ^{[1
]}

Kim, Sun-Kyung ^{[1
]}

Bae, Duk Kyu ^{[1
]}

Kang, Bong-Cheol ^{[1
]}

Lee, Jeong Soo ^{[1
]}

Lee, Yong-Hee ^{[2
]}

机构：

[1] LG Elect Inst Technol, LED Res & Dev Lab, Seoul 137724, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2008年 / 20卷 / 21-24期

关键词：

GaN; laser liftoff (LLO); light-emitting diode (LED); photonic crystal (PhC);

D O I：

10.1109/LPT.2008.2006506

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated a thin-film vertical-injection light-emitting diode (LED), which uses a highly efficient coherent external scattering of trapped light by photonic crystal (PhC). The PhC patterns (a = 1200 nm) were formed on top of the n-GaN surface after laser liftoff of the sapphire substrate. This light extraction structure just above micron scale was prepared by a conventional photolithography (A. = 405 nm). The Si-gel-encapsulated thin-film LED with PhC patterns (a = 1 200 nm), which had a depth of 500 urn, demonstrated up to 76% improvement in light output power at a forward current of 60 mA, compared with the nonpatterned thin film LED.

引用

页码：2096 / 2098

页数：3

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