SPICE modeling of flux-controlled unipolar memristive devices

被引:6
|
作者
Fang Xu-Dong [1 ]
Tang Yu-Hua [2 ]
Wu Jun-Jie [1 ]
Zhu Xuan [1 ]
Zhou Jing [1 ]
Huang Da [1 ]
机构
[1] Natl Univ Def Technol, Sch Comp, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China
[2] Natl Univ Def Technol, Sch Comp, Dept Comp Sci & Technol, Changsha 410073, Hunan, Peoples R China
基金
中国国家自然科学基金;
关键词
unipolar memristive devices; memristive; SPICE model; RESISTIVE SWITCHING MEMORIES; SYSTEMS;
D O I
10.1088/1674-1056/22/7/078901
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Unipolar memristive devices are an important kind of resistive switching devices. However, few circuit models of them have been proposed. In this paper, we propose the SPICE modeling of flux-controlled unipolar memristive devices based on the memristance versus state map. Using our model, the flux thresholds, ON and OFF resistance, and compliance current can easily be set as model parameters. We simulate the model in HSPICE using model parameters abstracted from real devices, and the simulation results show that the proposed model caters to the real device data very well, thus demonstrating that the model is correct. Using the same modeling methodology, the SPICE model of charge-controlled unipolar memristive devices could also be developed. The proposed model could be used to model resistive memory cells, logical gates as well as synapses in artificial neural networks.
引用
收藏
页数:6
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