A High Efficiency High Power Density Harmonic-tuned Ka Band Stacked-FET GaAs Power Amplifier

被引：0
作者：
Nguyen, Duy P. [1 ]
Thanh Pham [1 ]
Pham, Binh L. [1 ]
Anh-Vu Pham [1 ]
机构：
[1] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA
来源：
2016 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS) | 2016年
关键词：
Power Amplifer; Stacked-FET; Ka-band; Gallium Arsenide; MMIC; Harmonic-tuned;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A stacked-FET power amplifier (PA) with harmonic-tuned output matching network is demonstrated using a 0.15-mu m Gallium Arsenide (GaAs) technology. The fabricated PA exhibits 28.5 dBm output power, 12 dB gain and 38.4% power added efficiency (PAE). To the best of our knowledge, this is for the first time stacked-FET technique is used in combining with harmonic-tuned output network to achieve high PAE and high power density simultaneously in a GaAs PA.
引用
收藏
页码：158 / 161
页数：4
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