A High Efficiency High Power Density Harmonic-tuned Ka Band Stacked-FET GaAs Power Amplifier

被引：0
作者：
Nguyen, Duy P. [1 ]
Thanh Pham [1 ]
Pham, Binh L. [1 ]
Anh-Vu Pham [1 ]
机构：
[1] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA
来源：
2016 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS) | 2016年
关键词：
Power Amplifer; Stacked-FET; Ka-band; Gallium Arsenide; MMIC; Harmonic-tuned;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A stacked-FET power amplifier (PA) with harmonic-tuned output matching network is demonstrated using a 0.15-mu m Gallium Arsenide (GaAs) technology. The fabricated PA exhibits 28.5 dBm output power, 12 dB gain and 38.4% power added efficiency (PAE). To the best of our knowledge, this is for the first time stacked-FET technique is used in combining with harmonic-tuned output network to achieve high PAE and high power density simultaneously in a GaAs PA.
引用
收藏
页码：158 / 161
页数：4
相关论文
共 50 条
  • [31] A CMOS Stacked-FET Power Amplifier Using PMOS Linearizer with Improved AM-PM
    Kim, Unha
    Woo, Jung-Lin
    Park, Sunghwan
    Kwon, Youngwoo
    JOURNAL OF ELECTROMAGNETIC ENGINEERING AND SCIENCE, 2014, 14 (02) : 68 - 73
  • [32] A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT
    Li, Jiaxuan
    Yuan, Yang
    Yuan, Bin
    Fan, Jingxin
    Zeng, Jialong
    Yu, Zhongjun
    MICROMACHINES, 2023, 14 (06)
  • [33] A 26-GHz-Band High Back-Off Efficiency Stacked-FET Power Amplifier IC with Adaptively Controlled Bias and Load Circuits in 45-nm CMOS SOI
    Yoshimasu, Toshihiko
    Fang, Mengchu
    Sugiura, Tsuyoshi
    IEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS COMMUNICATIONS AND COMPUTER SCIENCES, 2021, E104A (02) : 477 - 483
  • [34] Design of A High-efficiency Dual-band Harmonic tuned Power Amplifier via Simplified Real Frequency Technique
    Ma, Liang
    Zhou, Jianyi
    Yu, Zhiqiang
    2015 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), VOLS 1-3, 2015,
  • [35] Design of a High-Efficiency Ka-Band TWT Power Amplifier for Radar Applications
    Livreri, Patrizia
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 2022, 50 (09) : 2824 - 2829
  • [36] A novel analytic design method of dual-band harmonic-tuned power amplifiers
    Huang, Hang
    Zhang, Bo
    Yu, Cuiping
    Gao, Jinchun
    Wu, Yongle
    Liu, Yuanan
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2018, 60 (10) : 2496 - 2500
  • [37] A 280 GHz Stacked-FET Power Amplifier Cell using 50 nm Metamorphic HEMT Technology
    Amado-Rey, B.
    Campos-Roca, Y.
    Friesicke, C.
    Tessmann, A.
    Lozar, R.
    Wagner, S.
    Leuther, A.
    Schlechtweg, M.
    Ambacher, O.
    2016 11TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2016, : 189 - 192
  • [38] A Full X-Band High-efficiency 12-Watt GaAs MMIC Power Amplifier with Harmonic Tuning
    Wu, Qinyang
    Song, Bai
    Shih, Yi-chi
    Huang, Xiaoqi
    Wu, Jingwei
    2015 IEEE TOPICAL CONFERENCE ON POWER AMPLIFIERS FOR WIRELESS AND RADIO APPLICATIONS (PAWR), 2015, : 22 - 24
  • [39] A broadband high efficiency monolithic power amplifier with GaAs HBT
    Li, Shaojun
    Lv, Hongliang
    Zhang, Yimen
    Zhang, Yuming
    Zhang, Yansong
    Asif, Muhammad
    IEICE ELECTRONICS EXPRESS, 2018, 15 (10):
  • [40] Design of High Power Density Amplifiers: Application to Ka Band
    Davide Passi
    Alberto Leggieri
    Franco Di Paolo
    Marco Bartocci
    Antonio Tafuto
    Journal of Infrared, Millimeter, and Terahertz Waves, 2017, 38 : 1252 - 1263
12345