Semiconductor-coupled Josephson junctions with a submicron split gate electrode

被引:5
作者
Takayanagi, H
机构
[1] NTT Basic Research Laboratories, Atsugi-shi, Kanagawa 243-01
关键词
D O I
10.1016/0921-4526(95)00572-2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The superconducting and normal transport in a semiconductor-coupled Josephson junction in the clean limit has been studied by using a junction whose channel is a high-mobility two-dimensional electron gas (2DEG) in the semiconductor heterostructure and that has a submicron split gate electrode on the channel. When the absolute value of negative gate voltage V-g is small, the critical current oscillates as a function of gate voltage, and this oscillation is due to Fabry-Perot interference of the quasiparticles. When the absolute value of V-g is large, the split gate defines a quantum point contact in the 2DEG. Andreev reflection leads to the reflected holes being focused to the quantum point contact and the current-voltage characteristics change from current-deficit to excess-current.
引用
收藏
页码:113 / 118
页数:6
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