Nobel Lecture: Fascinated journeys into blue light

被引：123

作者：

Akasaki, Isamu ^{[1
,2
]}

机构：

[1] Meijo Univ, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[2] Nagoya Univ, Akasaki Res Ctr, Chikusa Ku, Nagoya, Aichi 4648601, Japan

来源：

REVIEWS OF MODERN PHYSICS | 2015年 / 87卷 / 04期

基金：

日本学术振兴会;

关键词：

ELECTRON-BEAM IRRADIATION; PHASE EPITAXIAL-GROWTH; P-TYPE CONDUCTION; STIMULATED-EMISSION; SAPPHIRE SUBSTRATE; BUFFER LAYER; PIEZOELECTRIC FIELDS; ROOM-TEMPERATURE; NEAR-ULTRAVIOLET; CRYSTAL-GROWTH;

D O I：

10.1103/RevModPhys.87.1119

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

[No abstract available]

引用

页码：1119 / 1131

页数：13

共 68 条

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[2] AKASAKI I, 1991, J LUMIN, V48-9, P666
[3] AKASAKI I, 1995, JPN J APPL PHYS 2, V34, P1517
[4] Akasaki I., 1993, Gallium Arsenide and Related Compounds 1992. Proceedings of the Nineteenth International Symposium, P851
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[6] EFFECTS OF AIN BUFFER LAYER ON CRYSTALLOGRAPHIC STRUCTURE AND ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAN AND GA1-XALXN(0-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.4) FILMS GROWN ON SAPPHIRE SUBSTRATE BY MOVPE
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[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 98 (1-2) : 209 - 219
[7] Shortest wavelength semiconductor laser diode
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[J]. ELECTRONICS LETTERS, 1996, 32 (12) : 1105 - 1106
[8] Akasaki I, 1996, INST PHYS CONF SER, V142, P7
[9] AKASAKI I, 1992, MATER RES SOC SYMP P, V242, P383, DOI 10.1557/PROC-242-383
[10] Akasaki I., 1992, Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials, P327

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