High power and highly linear monolithically integrated distributed balanced photodetectors

被引：23
作者：
Islam, MS
Jung, T
Itoh, T
Wu, MC
Nespola, A
Sivco, DL
Cho, AY
机构：
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[2] Opt Technol Italia, R&D Dept, I-20126 Milan, Italy
[3] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA
来源：
JOURNAL OF LIGHTWAVE TECHNOLOGY | 2002年 / 20卷 / 02期
关键词：
analog fiber optic links; balanced photodetectors; failure mechanism; high photocurrent; high power photodiodes; metal-serniconductor-metal (XISM); microwave photonics; optical receivers; p-i-n; radiofrequency (RF) photonics;
D O I：
10.1109/50.983243
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A distributed balanced photodetector with high saturation photocurrent and excellent linearity has been experimentally demonstrated. The maximum linear direct current (de) photocurrent of 33 mA per branch is equivalent to 66mA in single-ended photodetectors. A setup for investigating the alternating current (ac) linearity of the receiver is proposed and experimentally demonstrated. The receiver exhibits high ac linearity, even under high power operation. The bandwidth of the receiver remains unchanged when the effective dc photocurrent is varied from I mA to 21 mA. The distribution of photocurrents was also measured. Device length for optimum radiofrequency (RF) performance is calculated and implemented in the design. A correlation between the dark current of the photodiodes and their failure mechanism has been established. Analyzing the failure mechanism, junction diodes are found to be more suitable for high power applications.
引用
收藏
页码：285 / 295
页数：11
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