Nondestructive method for evaluation of electrical parameters of AlGaN/GaN HEMT heterostructures

被引：16

作者：

Paszkiewicz, Bogdan ^{[1
]}

Wosko, Mateusz ^{[1
]}

Paszkiewicz, Regina ^{[1
]}

Tlaczala, Marek ^{[1
]}

机构：

[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3 | 2013年 / 10卷 / 03期

关键词：

AlGaN/GaN; heterostructures; HEMT; impedance spectroscopy;

D O I：

10.1002/pssc.201200709

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Impedance spectroscopy methods were proposed for direct evaluation of electrical properties of the AlGaN/GaN heterostructures. The impedance spectra were measured using a two contact mercury probe. Application of the proper distributed elements equivalent circuits enabled to evaluate not only the typically obtained parameters of the heterostructures such as sheet carriers concentration and its pinch off voltage but also the dependence of the channel sheet resistance and the mobility of 2DEG on d.c. gate bias. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：490 / 493

页数：4

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