Experimentally Demonstrated Filament-based Switching Mechanism for Al/CuxO/Cu Memristive Devices

被引：0

作者：

McDonald, N. R. ^{[1
]}

Bishop, S. M. ^{[2
]}

Cady, N. C. ^{[2
]}

机构：

[1] USAF, Res Lab, Informat Directorate, Griffiss AFB, NY 13441 USA

[2] Univ Albany, Coll Nanoscale Sci & Engn, Albany, NY USA

来源：

2012 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT | 2012年

关键词：

NONVOLATILE MEMORY APPLICATION; RESISTIVE MEMORY; CUXO FILMS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Al/CuxO/Cu memristive devices created via a plasma oxidation step have previously demonstrated complete nonpolar switching behavior [1]. An additional material contamination control measure resulted in improved uniformity of I-V curve behavior but necessitated an initial forming step in most devices. The operation voltages were irrespective of switching style and top electrode (TE) size. The high resistance state resistance increased with decreasing TE size; the low resistance state resistance remained invariant. Lateral switching of memristive device pairs unambiguously indicated filament-based device switching. A voltage-driven CuxO filament composition modulation switching mechanism is suggested instead of the popular Joule heating RESET mechanism.

引用

页码：195 / 198

页数：4