A light-shield a-Si TFT with low dark-leakage currents

被引：0

作者：

Chen, YE ^{[1
]}

Chen, JH ^{[1
]}

Tai, YH ^{[1
]}

机构：

[1] Ind Technol Res Inst, Elect Res & Serv Org, Hsinchu 310, Taiwan

来源：

ASID'99: PROCEEDINGS OF THE 5TH ASIAN SYMPOSIUM ON INFORMATION DISPLAY | 1999年

关键词：

light-shield; a-Si; TFT; leakage current;

D O I：

10.1109/ASID.1999.762721

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A light-shield amorphous silicon (a-Si:H) thin film transistor (TFT) with low dark leakage current is developed. The a-Si:H island edge of this TFT is selectively oxidized without affecting the metal/n(+) a-Si:H layer contact quality, and thus the hole current flowing through the parasitic metal/intrinsic a-Si:H contact at that edge can be blocked. Using this technique, the TFT with effective mobility of 0.7cm(2)/Vsec, subthreshold swing of 0.55V/dec, and threshold voltage of 1.5 V can be achieved. In addition, the leakage current of the TFT is as low as 0.5 pA at high negative gate bias of -10V and drain voltage of 10V.

引用

页码：89 / 92

页数：4