Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots

被引：3
作者：
Bielecka, U. [1 ,3 ]
Lutsyk, P. [1 ,2 ]
Nyk, M. [1 ]
Janus, K. [1 ]
Samoc, M. [1 ]
Bartkowiak, W. [1 ]
Nespurek, S. [3 ]
机构：
[1] Wroclaw Univ Technol, Dept Chem, Inst Phys & Theoret Chem, PL-50370 Wroclaw, Poland
[2] Natl Acad Sci Ukraine, Inst Phys, UA-03680 Kiev, Ukraine
[3] AS CR, Inst Macromol Chem, Prague 16206 6, Czech Republic
来源：
MATERIALS SCIENCE-POLAND | 2013年 / 31卷 / 02期
关键词：
organic field effect transistor; quantum dots; poly(3-hexylthiophene); hybrid material; HYBRID SOLAR-CELLS; NANOCRYSTALS; COMPOSITES; MORPHOLOGY; LIGANDS;
D O I：
10.2478/s13536-013-0101-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Hybrid field-effect transistors (FETs) based on poly(3-hexylthiophene) (P3HT) containing CdSe quantum dots (QDs) were fabricated. The effect of the concentration of QDs on charge transport in the hybrid material was studied. The influence of the QDs capping ligand on charge transport parameters was investigated by replacing the conventional trioctylphosphine oxide (TOPO) surfactant with pyridine to provide closer contact between the organic and inorganic components. Electrical parameters of FETs with an active layer made of P3HT: CdSe QDs blend were determined, showing field-effect hole mobilities up to 1.1x10(-4) cm(2)/Vs. Incorporation of TOPO covered CdSe QDs decreased the charge carrier mobility while the pyridine covered CdSe QDs did not alter this transport parameter significantly.
引用
收藏
页码：288 / 297
页数：10
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