High temperature switching operation of a power diamond Schottky barrier diode

被引：30

作者：

Funaki, Tsuyoshi ^{[1
]}

Hirano, Makiko ^{[1
]}

Umezawa, Hitoshi

Shikata, Shinichi

机构：

[1] Osaka Univ, Grad Sch Engn, Div Elect Elect & Informat Eng, Osaka 5650871, Japan

来源：

IEICE ELECTRONICS EXPRESS | 2012年 / 9卷 / 24期

关键词：

diamond Schottky barrier diode; switching characteristics; diamond semiconductor;

D O I：

10.1587/elex.9.1835

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Diamond is considered to be the most promising wide band gap semiconductor material for the fabrication of power switching devices with respect to the figure of merit. The authors have developed a high voltage and high current diamond Schottky barrier diode (SBD). This paper evaluates the static and dynamic electrical performance of the developed diamond SBD as a power switching device. The experimental results obtained under different operating conditions validate the fast switching, unipolar device characteristics, and high temperature operation capability of the developed diamond SBD.

引用

页码：1835 / 1841

页数：7

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