800meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots

被引：39

作者：

Nowozin, T. ^{[1
]}

Bonato, L. ^{[1
]}

Hoegner, A. ^{[1
]}

Wiengarten, A. ^{[1
]}

Bimberg, D. ^{[1
]}

Lin, Wei-Hsun ^{[2
]}

Lin, Shih-Yen ^{[2
]}

Reyner, C. J. ^{[3
,4
]}

Liang, Baolai L. ^{[3
,4
]}

Huffaker, D. L. ^{[3
,4
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Acad Sinica, Res Ctr Appl Sci, Taipei 115, Taiwan

[3] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[4] Univ Calif Los Angeles, Calif Nanosyst Inst, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 05期

关键词：

GASB; SEMICONDUCTORS; EVOLUTION; HOLE;

D O I：

10.1063/1.4791678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The localization energies, capture cross sections, and storage times of holes in GaSb quantum dots (QDs) are measured for three GaSb/GaAs QD ensembles with different QD sizes. The structural properties, such as height and diameter, are determined by atomic force microscopy, while the electronic properties are measured using deep-level transient spectroscopy. The various QDs exhibit varying hole localization energies corresponding to their size. The maximum localization energy of 800 (+/- 50) meV is achieved by using additional Al0.3Ga0.7As barriers. Based on an extrapolation, alternative material systems are proposed to further increase the localization energy and carrier storage time of QDs. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791678]

引用

页数：4

共 28 条

[1] Theory of the electronic structure of GaN/AIN hexagonal quantum dots
Andreev, AD
O'Reilly, EP
[J]. PHYSICAL REVIEW B, 2000, 62 (23) : 15851 - 15870
[2] Room-temperature operations of memory devices based on self-assembled InAs quantum dot structures
Balocco, C
Song, AM
Missous, M
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (24) : 5911 - 5913
[3] Antimony-based quantum dot memories
Bimberg, Dieter
Marent, Andreas
Nowozin, Tobias
Schliwa, Andrei
[J]. QUANTUM DOTS AND NANOSTRUCTURES: SYNTHESIS, CHARACTERIZATION, AND MODELING VIII, 2011, 7947
[4] Blood P, 1992, The Electrical Characterization of Semiconductors: Majority Carriers and Electron States (Techniques of Physics)
[5] BOURGOIN J, 1983, SPRINGER SERIES SOLI, V35
[6] 450 meV hole localization in GaSb/GaAs quantum dots
Geller, M
Kapteyn, C
Müller-Kirsch, L
Heitz, R
Bimberg, D
[J]. APPLIED PHYSICS LETTERS, 2003, 82 (16) : 2706 - 2708
[7] A write time of 6 ns for quantum dot based memory structures
Geller, M.
Marent, A.
Nowozin, T.
Bimberg, D.
Akcay, N.
Oncan, N.
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (09)
[8] Photoluminescence studies of self-assembled InSb, GaSb, and AlSb quantum dot heterostructures
Glaser, ER
Bennett, BR
Shanabrook, BV
Magno, R
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (25) : 3614 - 3616
[9] RADIATIVE RECOMBINATION IN TYPE-II GASB/GAAS QUANTUM DOTS
HATAMI, F
LEDENTSOV, NN
GRUNDMANN, M
BOHRER, J
HEINRICHSDORFF, F
BEER, M
BIMBERG, D
RUVIMOV, SS
WERNER, P
GOSELE, U
HEYDENREICH, J
RICHTER, U
IVANOV, SV
MELTSER, BY
KOPEV, PS
ALFEROV, ZI
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (05) : 656 - 658
[10] Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion
Hwang, Jinyoung
Martin, Andrew J.
Millunchick, Joanna M.
Phillips, Jamie D.
[J]. JOURNAL OF APPLIED PHYSICS, 2012, 111 (07)

← 1 2 3 →