Growth and Band Gap Control of Corundum-Structured α-(AlGa)2O3 Thin Films on Sapphire by Spray-Assisted Mist Chemical Vapor Deposition

被引：129

作者：

Ito, Hiroshi ^{[1
]}

Kaneko, Kentaro ^{[1
]}

Fujita, Shizuo ^{[2
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

[2] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Kyoto 6158510, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 10期

关键词：

BETA-GA2O3; SINGLE-CRYSTALS; CONDUCTIVITY;

D O I：

10.1143/JJAP.51.100207

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Following the previous achievement of highly crystalline alpha-Ga2O3 thin films on c-plane sapphire, the growth of corundum-structured alpha-(AlxGa1-x)(2)O-3 was examined aiming at the future application of alpha-(AlxGa1-x)(2)O-3/Ga2O3 heterostructures to power devices and other functional devices. The results show the control of x and band gap up to 0.81 and 7.8 eV, respectively, maintaining the dominant corundum structure. The transmission electron microscope observation suggested the formation of the crystallographically good interface of alpha-(AlxGa1-x)(2)O-3/Ga2O3 without the severe generation of threading dislocation lines from the interface. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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