Growth and Band Gap Control of Corundum-Structured α-(AlGa)2O3 Thin Films on Sapphire by Spray-Assisted Mist Chemical Vapor Deposition

被引：128
作者：
Ito, Hiroshi [1 ]
Kaneko, Kentaro [1 ]
Fujita, Shizuo [2 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
[2] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Kyoto 6158510, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 10期
关键词：
BETA-GA2O3; SINGLE-CRYSTALS; CONDUCTIVITY;
D O I：
10.1143/JJAP.51.100207
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Following the previous achievement of highly crystalline alpha-Ga2O3 thin films on c-plane sapphire, the growth of corundum-structured alpha-(AlxGa1-x)(2)O-3 was examined aiming at the future application of alpha-(AlxGa1-x)(2)O-3/Ga2O3 heterostructures to power devices and other functional devices. The results show the control of x and band gap up to 0.81 and 7.8 eV, respectively, maintaining the dominant corundum structure. The transmission electron microscope observation suggested the formation of the crystallographically good interface of alpha-(AlxGa1-x)(2)O-3/Ga2O3 without the severe generation of threading dislocation lines from the interface. (C) 2012 The Japan Society of Applied Physics
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页数：3
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共 26 条
  • [11] Successful Growth of Conductive Highly Crystalline Sn-Doped α-Ga2O3 Thin Films by Fine-Channel Mist Chemical Vapor Deposition
    Kawaharamura, Toshiyuki
    Dang, Giang T.
    Furuta, Mamoru
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (04)
  • [12] Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors
    Oshima, Takayoshi
    Okuno, Takeya
    Fujita, Shizuo
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (11): : 7217 - 7220
  • [13] β-Al2xGa2-2xO3 Thin Film Growth by Molecular Beam Epitaxy
    Oshima, Takayoshi
    Okuno, Takeya
    Arai, Naoki
    Kobayashi, Yasushi
    Fujita, Shizuo
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (07)
  • [14] Flame Detection by a β-Ga2O3-Based Sensor
    Oshima, Takayoshi
    Okuno, Takeya
    Arai, Naoki
    Suzuki, Norihito
    Hino, Harumichi
    Fujita, Shizuo
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (01)
  • [15] Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
    Sasaki, Kohei
    Kuramata, Akito
    Masui, Takekazu
    Villora, Encarnacion G.
    Shimamura, Kiyoshi
    Yamakoshi, Shigenobu
    [J]. APPLIED PHYSICS EXPRESS, 2012, 5 (03)
  • [16] Shimamura K., 2006, Nihon Kessho Seicho Gakkaishi, V33, P147
  • [17] Shinohara D, 2008, JPN J APPL PHYS, V47, P7311, DOI 10.1143/JJAP.47.73111
  • [18] Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal
    Suzuki, N.
    Ohira, S.
    Tanaka, M.
    Sugawara, T.
    Nakajima, K.
    Shishido, T.
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007, 4 (07): : 2310 - +
  • [19] Floating zone growth of β-Ga2O3:: A new window material for optoelectronic device applications
    Tomm, Y
    Ko, JM
    Yoshikawa, A
    Fukuda, T
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 66 (1-4) : 369 - 374
  • [20] Czochralski grown Ga2O3 crystals
    Tomm, Y
    Reiche, P
    Klimm, D
    Fukuda, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 2000, 220 (04) : 510 - 514
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