Growth and Band Gap Control of Corundum-Structured α-(AlGa)2O3 Thin Films on Sapphire by Spray-Assisted Mist Chemical Vapor Deposition

被引：128
作者：
Ito, Hiroshi [1 ]
Kaneko, Kentaro [1 ]
Fujita, Shizuo [2 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
[2] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Kyoto 6158510, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 10期
关键词：
BETA-GA2O3; SINGLE-CRYSTALS; CONDUCTIVITY;
D O I：
10.1143/JJAP.51.100207
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Following the previous achievement of highly crystalline alpha-Ga2O3 thin films on c-plane sapphire, the growth of corundum-structured alpha-(AlxGa1-x)(2)O-3 was examined aiming at the future application of alpha-(AlxGa1-x)(2)O-3/Ga2O3 heterostructures to power devices and other functional devices. The results show the control of x and band gap up to 0.81 and 7.8 eV, respectively, maintaining the dominant corundum structure. The transmission electron microscope observation suggested the formation of the crystallographically good interface of alpha-(AlxGa1-x)(2)O-3/Ga2O3 without the severe generation of threading dislocation lines from the interface. (C) 2012 The Japan Society of Applied Physics
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页数：3
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共 26 条
  • [1] Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method
    Aida, Hideo
    Nishiguchi, Kengo
    Takeda, Hidetoshi
    Aota, Natsuko
    Sunakawa, Kazuhiko
    Yaguchi, Yoichi
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (11) : 8506 - 8509
  • [2] Electrical Conductive Corundum-Structured α-Ga2O3 Thin Films on Sapphire with Tin-Doping Grown by Spray-Assisted Mist Chemical Vapor Deposition
    Akaiwa, Kazuaki
    Fujita, Shizuo
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (07)
  • [3] Oxygen sensitivity in gallium oxide thin films and single crystals at high temperatures
    Bartic, Marilena
    Toyoda, Yoshitaka
    Baban, Cristian-Ioan
    Ogita, Masami
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (6A): : 5186 - 5188
  • [4] Czochralski growth and characterization of β-Ga2O3 single crystals
    Galazka, Z.
    Uecker, R.
    Irmscher, K.
    Albrecht, M.
    Klimm, D.
    Pietsch, M.
    Bruetzam, M.
    Bertram, R.
    Ganschow, S.
    Fornari, R.
    [J]. CRYSTAL RESEARCH AND TECHNOLOGY, 2010, 45 (12) : 1229 - 1236
  • [5] Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
    Higashiwaki, Masataka
    Sasaki, Kohei
    Kuramata, Akito
    Masui, Takekazu
    Yamakoshi, Shigenobu
    [J]. APPLIED PHYSICS LETTERS, 2012, 100 (01)
  • [6] Kaneko K., 2011, EUR MAT RES SOC FALL
  • [7] Kaneko K., 2011, INT S COMP SEM
  • [8] Evaluation of Misfit Relaxation in α-Ga2O3 Epitaxial Growth on α-Al2O3 Substrate
    Kaneko, Kentaro
    Kawanowa, Hitoshi
    Ito, Hiroshi
    Fujita, Shizuo
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (02)
  • [9] Corundum-structured α-phase Ga2O3-Cr2O3-Fe2O3 alloy system for novel functions
    Kaneko, Kentaro
    Nomura, Taichi
    Fujita, Shizuo
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10, 2010, 7 (10): : 2467 - 2470
  • [10] Fabrication of Highly Crystalline Corundum-Structured α-(Ga1-xFex)2O3 Alloy Thin Films on Sapphire Substrates
    Kaneko, Kentaro
    Nomura, Taichi
    Kakeya, Itsuhiro
    Fujita, Shizuo
    [J]. APPLIED PHYSICS EXPRESS, 2009, 2 (07)
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