Electron microscopic investigation of MnSi1.7 layers on Si(001)

被引：15
|
作者：
Mogilatenko, A [1 ]
Falke, M [1 ]
Teichert, S [1 ]
Schwendler, S [1 ]
Sarkar, DK [1 ]
Hinneberg, HJ [1 ]
机构：
[1] Univ Technol Chemnitz, Inst Phys, D-09107 Chemnitz, Germany
来源：
MICROELECTRONIC ENGINEERING | 2002年 / 60卷 / 1-2期
关键词：
epitaxy; higher manganese silicide; silicide; thin films growth;
D O I：
10.1016/S0167-9317(01)00601-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Semiconducting higher manganese silicides (HMS) with a composition near that of MnSi1.7 are of special interest due to their thermoelectric properties. We report on the growth of HMS layers deposited by MBE using the template technique. In particular the influence of the template thickness on the structure and morphology of MnSi1.7 films on (001)Si substrates was investigated. It was found that there is an optimal template thickness that causes preferred epitaxial growth of the major amount of the silicide. Three different epitaxial orientation relations of the silicide crystals to the substrate were observed. Considering the specific features of the electron diffraction patterns of MnSi1.7 the HMS phase was identified as Mn4Si7. (C) 2002 Elsevier Science BY All rights reserved.
引用
收藏
页码：247 / 254
页数：8
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