Comparative structural and electronic studies of hydrogen interaction with isolated versus ordered silicon nanoribbons grown on Ag(110)

被引:39
作者
Davila, M. E. [1 ]
Marele, A. [2 ]
De Padova, P. [3 ]
Montero, I. [1 ]
Hennies, F. [4 ]
Pietzsch, A. [4 ]
Shariati, M. N. [4 ]
Gomez-Rodriguez, J. M. [2 ]
Le Lay, G. [5 ]
机构
[1] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain
[2] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain
[3] CNR ISM, I-00133 Rome, Italy
[4] Lund Univ, Max Lab, S-22100 Lund, Sweden
[5] Aix Marseille Univ, CNRS CINaM, F-13288 Marseille 9, France
关键词
ATOMIC-HYDROGEN; SELECTIVE ADSORPTION; NANOWIRES; SURFACES; PASSIVATION; NANOSTRUCTURES; OXIDATION; MOLECULES;
D O I
10.1088/0957-4484/23/38/385703
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We have investigated the geometry and electronic structure of two different types of self-aligned silicon nanoribbons (SiNRs), forming either isolated SiNRs or a self-assembled 5 x 2/5 x 4 grating on an Ag(110) substrate, by scanning tunnelling microscopy and high resolution x-ray photoelectron spectroscopy. At room temperature we further adsorb on these SiNRs either atomic or molecular hydrogen. The hydrogen absorption process and hydrogenation mechanism are similar for isolated or 5 x 2/5 x 4 ordered SiNRs and are not site selective; the main difference arises from the fact that the isolated SiNRs are more easily attacked and destroyed faster. In fact, atomic hydrogen strongly interacts with any Si atoms, modifying their structural and electronic properties, while molecular hydrogen has first to dissociate. Hydrogen finally etches the Si nanoribbons and their complete removal from the Ag(110) surface could eventually be expected.
引用
收藏
页数:7
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