MOS-controlled smart power synchronous rectifier

被引：0
|
作者：
Liang, YC [1 ]
Lim, CY [1 ]
Samudra, GS [1 ]
机构：
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore
来源：
IEEE REGION 10 INTERNATIONAL CONFERENCE ON ELECTRICAL AND ELECTRONIC TECHNOLOGY, VOLS 1 AND 2 | 2001年
关键词：
power electronics; synchronous rectifier; smart power integration;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper, a MOS-controlled smart power synchronous rectifier structure with complete smart-power integration is proposed for the first time: This structure can be an alternative approach from the previous BiCMOS design [1]. This proposed design eliminates the. need of having BiCMOS device structure and its process for circuit integration and to achieve a better performance in control on synchronous rectification.
引用
收藏
页码：480 / 482
页数：3
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