Electrochemical deposition of lead and tellurium into barrierless nanoporous anodic aluminium oxide

被引:15
作者
Ivanou, D. K. [1 ]
Ivanova, Yu. A. [1 ]
Lisenkov, A. D. [1 ]
Zheludkevich, M. L. [1 ]
Streltsov, E. A. [2 ]
机构
[1] Univ Aveiro, DECV CICECO, P-3810193 Aveiro, Portugal
[2] Belarusian State Univ, Minsk 220050, BELARUS
关键词
Alumina; Tellurium; Electrodeposition; Lead; Underpotential deposition; HIGH-ASPECT-RATIO; NANOWIRE ARRAYS; ELECTRODEPOSITION; FABRICATION; DISSOLUTION; SUBSTRATE; GROWTH; TE;
D O I
10.1016/j.electacta.2012.05.061
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Electrochemical deposition of Pb and Te into barrierless nanoporous aluminium oxide films on Ti substrates was studied. Porous anodic alumina on Ti was prepared by two-step anodization in oxalic acid of Al layer sputtered on Ti. The barrier layer was eliminated by the controllable acidic treatment of anodized samples. The effectiveness of the barrier layer dissolution was studied electrochemically using lead deposition-oxidation test reaction. Electrodeposition of Te into porous anodic alumina films was found to proceed with overvoltage related both to nucleation barrier and diffusion limitation in the pores. Lead underpotential deposition on Te particles electrodeposited in anodic alumina films was considered. It is characterized by high irreversibility due to the effective chemical interaction between Te nanoparticles and lead adatoms resulting in PbTe nanoparticles formation. Crown Copyright (C) 2012 Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:65 / 70
页数:6
相关论文
共 35 条
[1]   INFLUENCE OF HYDROSTATIC PRESSURE ON INTERBAND PHOTOCONDUCTIVITY IN TELLURIUM [J].
ANZIN, VB ;
KOSICHKI.YV ;
NADEZHDI.AI ;
SHIROKOV, AM .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 20 (01) :253-261
[2]   PIEZOELECTRIC AND ELASTIC PROPERTIES OF SINGLE CRYSTALLINE SE-TE ALLOYS [J].
ARAKI, K ;
TANAKA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (04) :472-&
[3]   Hexagonally arranged monodisperse silver nanowires with adjustable diameter and high aspect ratio [J].
Choi, J ;
Sauer, G ;
Nielsch, K ;
Wehrspohn, RB ;
Gösele, U .
CHEMISTRY OF MATERIALS, 2003, 15 (03) :776-779
[4]   THERMOELECTRIC-POWER OF TELLURIUM THIN-FILMS AND ITS THICKNESS AND TEMPERATURE-DEPENDENCE [J].
DAS, VD ;
JAYAPRAKASH, N ;
SOUNDARARAJAN, N .
JOURNAL OF MATERIALS SCIENCE, 1981, 16 (12) :3331-3334
[5]   THE FORMATION OF CONTROLLED-POROSITY MEMBRANES FROM ANODICALLY OXIDIZED ALUMINUM [J].
FURNEAUX, RC ;
RIGBY, WR ;
DAVIDSON, AP .
NATURE, 1989, 337 (6203) :147-149
[6]   Effect of ac electrodeposition conditions on the growth of high aspect ratio copper nanowires in porous aluminum oxide templates [J].
Gerein, NJ ;
Haber, JA .
JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (37) :17372-17385
[7]   A study on electrochemical growth behavior of the Co-Ni alloy nanowires in anodic aluminum oxide template [J].
Ghahremaninezhad, A. ;
Dolati, A. .
JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 480 (02) :275-278
[8]   Semiconducting glasses: A new class of thermoelectric materials? [J].
Goncalves, A. P. ;
Lopes, E. B. ;
Delaizir, G. ;
Vaney, J. B. ;
Lenoir, B. ;
Piarristeguy, A. ;
Pradel, A. ;
Monnier, J. ;
Ochin, P. ;
Godart, C. .
JOURNAL OF SOLID STATE CHEMISTRY, 2012, 193 :26-30
[9]   Electrochemical fabrication of cadmium telluride quantum dots using porous anodized aluminum on a silicon substrate [J].
Ikram, Ataul Aziz ;
Crouse, David T. ;
Crouse, Michael M. .
MATERIALS LETTERS, 2007, 61 (17) :3666-3668
[10]   Electrodeposition of Te onto monocrystalline n- and p-Si(100) wafers [J].
Ivanova, Yu. A. ;
Ivanou, D. K. ;
Streltsov, E. A. .
ELECTROCHIMICA ACTA, 2007, 52 (16) :5213-5218