Electrical conduction properties of La-substituted bismuth titanate single crystals

被引：0
作者：
Takahashi, M
Noguchi, Y
Miyayama, M
机构：
[1] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan
[2] JST, PREST, Meguro Ku, Tokyo 1538904, Japan
来源：
JOURNAL OF CERAMIC PROCESSING RESEARCH | 2005年 / 6卷 / 04期
关键词：
bismuth titanate; lanthanum substitution; single crystal; Ab initio calculation; oxygen vacancy;
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Single crystals of lanthanum-substituted bismuth titanate were grown by a self-flux method, and electrical conductivities were investigated at high temperatures. Lanthanum substitution suppressed Bi vaporization during annealing and decreased the electrical conductivity in both the a- and c-axes. It is suggested that lanthanum substitution stabilizes the perovskite blocks and hence decreases the concentrations of oxygen vacancies and holes as the conduction carriers. An ab-initio calculation indicated that the formation energy of an oxygen vacancy in the perovskite block is increased by lanthanum substitution, supporting the above experimental results.
引用
收藏
页码：281 / 285
页数：5
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