Simulation of 193 nm photoresists based on different polymer platforms

Chemically amplified resist models for Shipley 193 nm resists S6 and V2 were developed for use with commercial lithographic modeling software. S6 and V2 are based on methacrylate and vinyl ether/maleic anhydride polymer platforms, respectively, and contain an onium. salt photoacid generator and proprietary base quencher. Fundamental parameters for these resists were determined experimentally and subsequently tuned to establish valid models. Current modeling algorithms appear sufficient to predict the lithographic behavior of typical features of interest. Experimental measurements indicate that these 2 resists are similar with respect to acid photogeneration efficiency (0.04 cm(2)/mJ), polymer deprotection rate constant (0.05-0.1 l/s), and developer selectivity (7). However, S6 exhibits greater transparency (0.35 1/mum vs. 0.5 1/mum for V2), lower acid diffusion, and greater surface inhibition. V2 exhibits considerably smoother dissolution.