Microsecond spin-flip times in n-GaAs measured by time-resolved polarization of photoluminescence -: art. no. 121307

被引：44
作者：
Colton, JS [1 ]
Kennedy, TA [1 ]
Bracker, AS [1 ]
Gammon, D [1 ]
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
来源：
PHYSICAL REVIEW B | 2004年 / 69卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.69.121307
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have observed microsecond spin-flip times in lightly doped n-GaAs, by measuring the photoluminescence polarization in the time domain with pump and probe pulses. Times up to 1.4 mus have been measured. Our results as a function of magnetic field indicate three regions governing the spin relaxation: a low field region, where spin-flip times increase due to suppression of the nuclear hyperfine. interaction for localized electrons, a medium field region where spin-flip times increase due to narrowing of the hyperfine relaxation for interacting electrons, and a high field region where spin-flip times begin to level off due to the increasing importance of spin-orbit relaxation mechanisms.
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