Solid source molecular beam epitaxial growth of In0.48Ga0.52P on GaAs substrates using a valved phosphorus cracker cell

We report the molecular beam epitaxial growth of InGaP on GaAs (100) substrate using a valved phosphorus cracker cell at various substrate temperatures (T-s from 420 degrees C to 540 degrees C). Sample characterization was carried out using Raman scattering (RS), photoluminescence (PL) and X-ray diffraction (XRD). Surface morphology characterization was performed using scanning electron microscopy (SEM). Typical InGaP layers showed a lattice mismatch of < 10(-3) and PL full-width at half maximum (FWHM) of similar to 7 meV at 10 K. The Raman spectrum showed peaks at 30 cm(-1), 360 cm(-1) and 380 cm(-1) corresponding to the transverse-optic (TO), InP-like longitudinal-optic (LO) and GaP-like LO modes, respectively. No Raman signals were detected from the sample grown at substrate temperature (T-s) of 540 OC, due to poor surface morphology arising from indium desorption. A marginal increase in ordering, as evidenced from the slight decrease (similar to 30 meV) in the PL peak energy nias seen in samples grown at increasing substrate temperature. Furthermore, no significant variation in the FWHM of the LO modes, TO mode and intensity ratio of the TO mode to the InP-like LO made were observed, suggesting that any ordering in the material grown using this technique is weak.