Reaction of implanted n isotope with SiO2 near Si3N4-Film and SiO2-substrate interface

被引：2

作者：

Shinde, Ninad

Matsunami, Noriaki ^{[1
]}

Fukuoka, Osamu

Tazawa, Masato

Shimura, Tetsuo

Chimi, Yasuhiro

Sataka, Masao

机构：

[1] Nagoya Univ, Div Energy Sci, EcoTopia Sci Inst, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Natl Inst Adv Ind Sci & Technol, Nagoya, Aichi 4638560, Japan

[3] Nagoya Univ, NanoMat Sci Div, EcoTopia Sci Inst, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[4] Japan Atom Energy Agcy, Dept Mat Sci, Ibaraki 3191195, Japan

来源：

JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY | 2006年 / 43卷 / 04期

关键词：

nitrogen 15-isotope-rich film; silicon-nitride; implantation; interface reaction; Rutherford backscattering spectroscopy; nuclear reaction analysis; optical absorption;

D O I：

10.3327/jnst.43.382

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

We have investigated 100 keV N-15 (90% enriched) implantation effects on Si3N4 films on SiO2-glass-substrate. The Si3N4 films were prepared by using reactive RF-magnetron-sputter-deposition method in N-2 (natural isotope abundance) gas at room temperature. The composition and film thickness were measured by Rutherford backscattering spectroscopy (RBS) and optical absorption spectroscopy. The RBS and optical absorption spectroscopy show increase in the film thickness with the stoichiometric composition, by N-15 ion implantation. These results and depth distribution of the implanted N-15, which is obtained by nuclear reaction analysis (NRA), lead to formation of Si-3 N-15(4) film (embedded isotope rich nitride film). Enrichment of N-15 in the grown silicon-nitride film is estimated to be similar to 70%.

引用

页码：382 / 385

页数：4