SA-MOVPE of InGaAs nanowires and their compositions studied by micro-PL measurement

被引：21

作者：

Sato, Takuya ^{[1
]}

Kobayashi, Yasunori

Motohisa, Junichi

Hara, Shinjiro

Fukui, Takashi

机构：

[1] Hokkaido Univ, Grad Sch IST, Sapporo, Hokkaido 0608628, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 23期

关键词：

Nanostructures; Metalorganic vapor-phase epitaxy; Selective epitaxy; Semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2008.07.123

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We studied the growth of InGaAs nanowires on InP(1 1 1)B substrates by selective-area metalorganic vapor-phase epitaxy (SA-MOVPE). We proposed a growth model of InGaAs nanowires based on the observation Of growth under various condition. We investigated the composition of InGaAs nanowires using micro-photoluminescence and confirmed the relation between composition of InGaAs nanowires and the growth rate. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：5111 / 5113

页数：3