SA-MOVPE of InGaAs nanowires and their compositions studied by micro-PL measurement

被引：21
作者：
Sato, Takuya [1 ]
Kobayashi, Yasunori
Motohisa, Junichi
Hara, Shinjiro
Fukui, Takashi
机构：
[1] Hokkaido Univ, Grad Sch IST, Sapporo, Hokkaido 0608628, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 23期
关键词：
Nanostructures; Metalorganic vapor-phase epitaxy; Selective epitaxy; Semiconducting III-V materials;
D O I：
10.1016/j.jcrysgro.2008.07.123
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We studied the growth of InGaAs nanowires on InP(1 1 1)B substrates by selective-area metalorganic vapor-phase epitaxy (SA-MOVPE). We proposed a growth model of InGaAs nanowires based on the observation Of growth under various condition. We investigated the composition of InGaAs nanowires using micro-photoluminescence and confirmed the relation between composition of InGaAs nanowires and the growth rate. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：5111 / 5113
页数：3
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