Piecewise Linear-based Hybrid Simulation of MOS and Single-Electron Circuits

被引:0
作者
Sarmiento-Reyes, Arturo
Hernandez-Martinez, Luis
Gutierrez de Anda, Miguel Angel
Castro Gonzalez, Francisco Javier
机构
来源
2010 FIRST IEEE LATIN AMERICAN SYMPOSIUM ON CIRCUITS AND SYSTEMS (LASCAS) | 2010年
关键词
Single-electron transistor; Hybrid simulation; Piecewise linear modelling;
D O I
暂无
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
CMOS downscaling and recent advances in Single-Electron devices - such as Single-Electron Transistors (SET), foreseen the combination of both devices in hybrid systems. Despite the current problems in manufacturing single-electron structures, there is an increasing need for improving the designpath of these systems by tackling several aspects, among them, device modelling for hybrid simulation. This paper introduces a model for the SET that can be easily combined with MOS models for co-simulation of hybrid systems. The model constitutes a functional model for the SET in the form of an explicit piecewise linear (PWL) formulation that has been coded in a high level language which is used in the electrical simulation of several hybrid digital circuits.
引用
收藏
页码:69 / 72
页数:4
相关论文
共 11 条
[11]  
Yu YS, 1999, IEEE T ELECTRON DEV, V46, P1667, DOI 10.1109/16.777155