Semiconductor saturable-absorber mirror passively Q-switched Yb:YAG microchip laser

被引：8

作者：

Yin, Xia ^{[1
]}

Meng, Junqing ^{[1
]}

Zu, Jifeng ^{[1
]}

Chen, Weibiao ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Space Laser Commun & Testing Technol, Shanghai 201800, Peoples R China

来源：

CHINESE OPTICS LETTERS | 2013年 / 11卷 / 08期

关键词：

D O I：

10.3788/COL201311.081402

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A compact passively Q-switched Yb:YAG microchip laser is demonstrated. Featuring a semiconductor saturable-absorber mirror (SESAM), the laser yields pulses of 219 Ps when the length of the microchip Yb:YAG crystal is 100 mu m and the beam quality is M-2 < 1.3. To the best of our knowledge, pulses from the proposed laser are the shortest Q-switching pulses obtained from Yb:YAG microchip lasers currently available.

引用

页数：3

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