p/i/n-Type poly-Si thin-film transistor for quasi-static capacitance-voltage measurement

被引：2

作者：

Kimura, Mutsumi ^{[1
,2
]}

Hiroshima, Yasushi ^{[3
]}

机构：

[1] Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan

[2] Ryukoku Univ, Joint Res Ctr Sci & Technol, Otsu, Shiga 5202194, Japan

[3] Seiko Epson Corp, Visual Prod Operat Div, Fujimi, Nagano 3990295, Japan

来源：

SOLID-STATE ELECTRONICS | 2013年 / 87卷

关键词：

p/i/n; Poly-Si; Thin-film transistor (TFT); Quasi-static; Capacitance-voltage (C-V) measurement; SILICON;

D O I：

10.1016/j.sse.2013.04.031

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose employing a p/i/n-type poly-Si thin-film transistor (TFT) for quasi-static capacitance voltage (C-V) measurement. Since the electric current smoothly flows through either the n-type or p-type region, relatively high measurement frequency can be used to observe a quasi-static C-V characteristic for any voltage conditions, which improves the signal-noise ratio. The quasi-static C-V characteristics are available for various analyses such as extraction of trap densities. (c) 2013 Elsevier Ltd. All rights reserved.

引用

页码：1 / 3

页数：3

共 8 条

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