Preparation of multiband structure with Cu2Se/Ga3Se2/In3Se2 thin films by thermal evaporation technique for maximal solar spectrum utilization

被引:6
作者
Mohan, A. [1 ]
Rajesh, S. [2 ]
Gopalakrishnan, M. [3 ]
机构
[1] Karunya Univ, Dept Phys, Thin Film Lab, Coimbatore 641114, Tamil Nadu, India
[2] Karunya Univ, Dept Nanosci & Technol, Coimbatore 641114, Tamil Nadu, India
[3] Vivekanandha Coll Arts & Sci Women, Dept Phys, Tiruchengode 637205, India
关键词
Multiband; Stacking; Composites; Annealing; Full solar spectrum utilization; EFFICIENCY; CELLS; LIMIT;
D O I
10.1016/j.spmi.2016.08.006
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The paper investigates and discusses the formation of multiband structure through the Cu2Se-Ga3Se-In3Se2 thin films for maximal solar spectrum utilization. Stacking different semiconductor materials with various band gaps were done by successive evaporation method. Based on the band gap values the layers are arranged (low to high bandgap from the substrate). The XRD results exhibits the formation of CIGS composites through this successive evaporation of Cu2Se/Ga3Se/In3Se2 and treating then with temperature. Scanning Electron Microscope images shows improved crystallinity with the reduction in the larger grain boundary scattering after annealing. Optical spectra shows the stronger absorption in an UV Visible region and higher transmission in the infrared and near infrared region. The optical band gap values calculated for as prepared films is 2.20 eV and the band gap was split into 1.62, 1.92 eV and 2.27eV for annealed samples. This multiband structures are much needed to utilize the full solar spectrum. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码:46 / 53
页数:8
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