Thermal chemical vapor deposition grown graphene heat spreader for thermal management of hot spots

被引：92

作者：

Gao, Zhaoli ^{[1
,2
]}

Zhang, Yong ^{[1
,3
,4
,5
]}

Fu, Yifeng ^{[6
]}

Yuen, Matthew M. F. ^{[2
]}

Liu, Johan ^{[1
,3
,4
,5
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden

[2] Hong Kong Univ Sci & Technol, Dept Mech Engn, Hong Kong, Hong Kong, Peoples R China

[3] SMIT Ctr, Sch Automat & Mech Engn, Shanghai 200072, Peoples R China

[4] Key State Lab New Displays & Syst Applicat, Shanghai 200072, Peoples R China

[5] Shanghai Univ, Shanghai 200072, Peoples R China

[6] SHT Smart High Tech AB, SE-41296 Gothenburg, Sweden

来源：

CARBON | 2013年 / 61卷

关键词：

HIGH-QUALITY; MONOLAYER GRAPHENE; BILAYER GRAPHENE; CONDUCTIVITY; TRANSPORT; FILM; TEMPERATURE; HYDROGEN; RAMAN;

D O I：

10.1016/j.carbon.2013.05.014

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Graphene of different layer numbers was fabricated using thermal chemical vapor deposition (TCVD), and it was demonstrated as a heat spreader in electronic packaging. Platinum thermal evaluation chips were used to evaluate the thermal performance of the graphene heat spreaders. The temperature of a hot spot driven at a heat flux of up to 430 W cm(-2) was decreased from 121 degrees C to 108 degrees C (Delta T approximate to 13 degrees C) with the insertion of the monolayer graphene heat spreader, compared with the multilayer (n = 6-10) ones' temperature drop of similar to 8 degrees C. Various parameters affecting the thermal performance of graphene heat spreaders were discussed, e.g. layer numbers of graphene, phonon scattering, thermal boundary resistance. We demonstrate the potentials of using a complementary metal oxide semiconductor compatible TCVD process to utilize graphene as a heat spreader for heat dissipation purposes. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：342 / 348

页数：7

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