Laser irradiation effects on tunneling properties of n-type GaAs and InAs by scanning tunneling microscopy

被引：13

作者：

Takahashi, T ^{[1
]}

Yoshita, M ^{[1
]}

机构：

[1] UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 24期

关键词：

D O I：

10.1063/1.115764

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the effect of laser irradiation on the tunneling properties of n-type GaAs and InAs by scanning tunneling microscopy. We measured the changes of tip height between on and off cycles of the laser light at different wavelengths and laser power. The laser-induced tip-sample separation is observed to be very large in GaAs compared with InAs when above-band-gap laser light is used. This result can be explained in terms of the shrinkage of the surface depletion layers by generated photocarriers. (C) 1996 American Institute of Physics.

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页码：3479 / 3481

页数：3

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