Diode-MTJ Crossbar Memory Cell Using Voltage-Induced Unipolar Switching for High-Density MRAM

被引：36

作者：

Dorrance, Richard ^{[1
]}

Alzate, Juan G. ^{[1
]}

Cherepov, Sergiy S. ^{[1
]}

Upadhyaya, Pramey ^{[1
]}

Krivorotov, Ilya N. ^{[2
]}

Katine, Jordan A. ^{[3
]}

Langer, Juergen ^{[4
]}

Wang, Kang L. ^{[1
]}

Amiri, Pedram Khalili ^{[1
]}

Markovic, Dejan ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[2] Univ Calif Irvine, Dept Phys & Astron, Irvine, CA 92697 USA

[3] Hitachi Global Storage Technol, San Jose, CA 95120 USA

[4] Singulus Technol AG, D-63796 Kahl Main, Germany

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 06期

关键词：

Diode-MTJ crossbar; magnetic tunnel junction (MTJ); magnetoelectric random access memory (MeRAM); magnetoresistive random access memory (MRAM); ATOMIC LAYERS;

D O I：

10.1109/LED.2013.2255096

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a diode-magnetic tunnel junction (MTJ) magnetic random access memory cell in a 65-nm complimentary metal-oxide-semiconductor compatible process. A voltage-controlled magnetic anisotropy switching mechanism, in addition to STT, allows for a unipolar set/reset write scheme, where voltage pulses of the same polarity, but different amplitudes, are used to switch the MTJs. A small crossbar array is constructed from 65-nm MTJs fabricated on a silicon wafer, with switching voltages similar to 1 V and thermal stability greater than 10 years, with discrete germanium diodes as access devices to allow for read/write operations. The crossbar architecture can be extended to multiple layers to create a 3-D stackable, nonvolatile memory with a sub-1F(2) effective cell size.

引用

页码：753 / 755

页数：3

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