In situ atomic force microscopy observation of dissolution process of Si(111) in oxygen-free water at room temperature

被引：21
|
作者：
Fukidome, H [1 ]
Matsumura, M
Komeda, T
Namba, K
Nishioka, Y
机构：
[1] Osaka Univ, Res Ctr Photoenerget Organ Mat, Osaka 5608531, Japan
[2] Inst Phys & Chem Res, Wako, Saitama 3510198, Japan
[3] Texas Instruments Inc, Tsukuba Res & Dev Ctr, Ibaraki, Osaka 3050841, Japan
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 1999年 / 2卷 / 08期
关键词：
D O I：
10.1149/1.1390848
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Si(111) surfaces were found to be easily flattened on an atomic scale by a treatment with water from which oxygen was removed by addition of a chemical deoxygenator. By in situ atomic force microscope measurements of the Si(111) surface, we succeeded for the first time in observing the flow of the steps on the atomically flattened Si(111) surface in oxygen-free water. The average step-flow rate was estimated to be 8 nm/min at room temperature. (C) 1999 The Electrochemical Society. S1099-0062(98)12-022-9. All rights reserved.
引用
收藏
页码：393 / 394
页数：2
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