Gate current dependent hot-carrier-induced degradation in LDMOS transistors

被引：10

作者：

Chen, J. F. ^{[1
,2
]}

Tian, K. -S. ^{[1
,2
]}

Chen, S. -Y. ^{[1
,2
]}

Lee, J. R. ^{[1
,2
]}

Wu, K. -M. ^{[3
]}

Huang, T. -Y. ^{[3
]}

Liu, C. M. ^{[3
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[3] Taiwan Semicond Mfg Co, Hsinchu 30077, Taiwan

来源：

ELECTRONICS LETTERS | 2008年 / 44卷 / 16期

关键词：

D O I：

10.1049/el:20080520

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hot-carrier- induced degradation in an n-type lateral diffused metal-oxide-semiconductor (LDMOS) transistor is investigated. Based on experimental data and technology computer-aided-design simulations,hot- electron injection in the channel region is identified to be the driving force of device degradation. Since gate current (I-g) consists mainly of electron injection, Ig is found to correlate with device degradation well. Such Ig dependent device degradation suggests that Ig should be examined in evaluating the hot- carrier reliability of LDMOS transistors.

引用

页码：991 / 992

页数：2

共 8 条

[1] Substrate current independent hot carrier degradation in NLDMOS devices [J].