Drain current model including velocity saturation for symmetric double-gate MOSFETs

被引：20

作者：

Hariharan, Venkatnarayan ^{[1
]}

Vasi, Juzer ^{[1
]}

Rao, V. Ramgopal ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 08期

关键词：

current; double-gate MOSFET (DGFET); mobility; modeling; MOSFETs; velocity saturation;

D O I：

10.1109/TED.2008.926745

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A drain current model is developed for a symmetrically driven undoped (or lightly doped) symmetric double-gate MOSFET (SDGFET) under the drift-diffusion transport mechanism, with velocity saturation effects being included as an integral part of the model derivation. Velocity saturation effects are modeled by using the Caughey-Thomas engineering model with exponent n = 2.I-d-V-d, I-d-V-g, g(m)-V-g, and g(DS)-V-d comparisons are made with 2-D device simulation results, and a very good match is found all the way from subthreshold to strong inversion. Gummel symmetry compliance is also shown.

引用

页码：2173 / 2180

页数：8

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