Graphing and grafting graphene: Classifying finite topological defects

被引：27

作者：

Cockayne, Eric ^{[1
]}

机构：

[1] NIST, Div Ceram, Mat Measurement Lab, Gaithersburg, MD 20899 USA

来源：

PHYSICAL REVIEW B | 2012年 / 85卷 / 12期

关键词：

GROWTH;

D O I：

10.1103/PhysRevB.85.125409

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structure of finite-area topological defects in graphene is described in terms of both the direct honeycomb lattice and its dual triangular lattice. Such defects are equivalent to cutting out a patch of graphene and replacing it with a different patch with the same number of dangling bonds. An important subset of these defects, bound by a closed loop of alternating 5- and 7-membered carbon rings, explains most finite-area topological defects that have been experimentally observed. Previously unidentified defects seen in scanning tunneling microscope (STM) images of graphene grown on SiC are identified as isolated divacancies or divacancy clusters.

引用

页数：6

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