Influence of zinc on electrical and microstructural properties of CaCu3Ti4O12 ceramics prepared by sol-gel process

被引:62
作者
Xu, Dong [1 ,2 ,3 ]
Zhang, Chen [1 ]
Lin, Yuanhua [4 ]
Jiao, Lei [1 ,5 ]
Yuan, Hongming [6 ]
Zhao, Guoping [1 ,5 ]
Cheng, Xiaonong [1 ,5 ]
机构
[1] Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[3] Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China
[4] Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Beijing 100083, Peoples R China
[5] Jiangsu Univ, Changzhou Engn Res Inst, Changzhou 213000, Peoples R China
[6] Jilin Univ, Coll Chem, State Key Lab Inorgan Synth & Preparat Chem, Changchun 130012, Peoples R China
关键词
CaCu3Ti4O12; Sol-gel; Dielectric properties; Varistor; HIGH-DIELECTRIC-CONSTANT; FILMS;
D O I
10.1016/j.jallcom.2012.01.128
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Zn-substituted CaCu3Ti4O12 ceramics were prepared by the sol-gel method. Their microstructures and electrical properties were investigated. XRD patterns showed that the CaCu3-xZnxTi4O12 (CCZTO) (x = 0.00, 0.06, 0.10, 0.20) ceramics, after sintering at 1050 degrees C for 20 h, were single phase with no Cu-rich phase. SEM results indicated that the samples had smaller grain sizes than those synthesized by traditional solid-state reaction methods. The dielectric and varistor properties of CCZTO were analyzed by a precision impedance analyzer and a varistor tester, respectively. According to Debye's equation, which states that the smaller the leakage current, the smaller the dielectric loss will be in the low-frequency region, we were able to roughly predict the relative value of the dielectric loss at low frequency by the leakage current. The best overall properties were obtained for x = 0.06 (CaCu2.94Zn0.06Ti4O12), which has several prospective applications, such as low voltage varistor switchings, gas-sensing devices, and varistor-capacitor double property devices. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:157 / 161
页数:5
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