Electron correlations in MnxGa1-xAs as seen by resonant electron spectroscopy and dynamical mean field theory

被引:49
作者
Di Marco, I. [1 ]
Thunstrom, P. [1 ]
Katsnelson, M. I. [2 ]
Sadowski, J. [3 ,4 ]
Karlsson, K. [5 ]
Lebegue, S. [6 ]
Kanski, J. [7 ]
Eriksson, O. [1 ]
机构
[1] Uppsala Univ, Dept Phys & Astron, SE-75120 Uppsala, Sweden
[2] Radboud Univ Nijmegen, Inst Mol & Mat, NL-6525 AJ Nijmegen, Netherlands
[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[4] Lund Univ, MAX Lab, SE-22100 Lund, Sweden
[5] Hogskolan Skovde, Dept Life Sci, SE-54128 Skovde, Sweden
[6] Univ Lorraine, Lab Cristallog Resonance Magnet & Modelisat CRM2, UMR CNRS 7036, Inst Jean Barriol, F-54506 Vandoeuvre Les Nancy, France
[7] Chalmers, Dept Appl Phys, SE-41296 Gothenburg, Sweden
基金
瑞典研究理事会; 欧洲研究理事会;
关键词
DILUTED MAGNETIC SEMICONDUCTORS; CURIE-TEMPERATURE; FERROMAGNETISM; PHOTOEMISSION; GA1-XMNXAS; LEVEL; MODEL;
D O I
10.1038/ncomms3645
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
After two decades since the discovery of ferromagnetism in manganese-doped gallium arsenide, its origin is still debated, and many doubts are related to the electronic structure. Here we report an experimental and theoretical study of the valence electron spectrum of manganese-doped gallium arsenide. The experimental data are obtained through the differences between off- and on-resonance photo emission data. The theoretical spectrum is calculated by means of a combination of density-functional theory in the local density approximation and dynamical mean field theory, using exact diagonalization as impurity solver. Theory is found to accurately reproduce measured data and illustrates the importance of correlation effects. Our results demonstrate that the manganese states extend over a broad range of energy, including the top of the valence band, and that no impurity band splits-off from the valence band edge, whereas the induced holes seem located primarily around the manganese impurity.
引用
收藏
页数:6
相关论文
共 60 条
[1]   Photoemission studies of the annealing-induced modifications of Ga0.95Mn0.05As -: art. no. 125204 [J].
Adell, M ;
Ilver, L ;
Kanski, J ;
Sadowski, J ;
Mathieu, R ;
Stanciu, V .
PHYSICAL REVIEW B, 2004, 70 (12) :125204-1
[2]  
[Anonymous], 1973, THEORETICAL PHOTOION
[3]   Photoemission studies of Ga1-xMnxAs:: Mn concentration dependent properties -: art. no. 115319 [J].
Åsklund, H ;
Ilver, L ;
Kanski, J ;
Sadowski, J ;
Mathieu, R .
PHYSICAL REVIEW B, 2002, 66 (11) :1153191-1153195
[4]  
Auslender M. I., 1982, TEOR MAT FIZ, V51, P436
[5]   THE EFFECTIVE SPIN HAMILTONIAN AND PHASE-SEPARATION INSTABILITY OF THE ALMOST HALF-FILLED HUBBARD-MODEL AND THE NARROW-BAND S-F MODEL [J].
AUSLENDER, MI ;
KATSNELSON, MI .
SOLID STATE COMMUNICATIONS, 1982, 44 (03) :387-389
[6]   Magnetic percolation in diluted magnetic semiconductors [J].
Bergqvist, L ;
Eriksson, O ;
Kudrnovsky, J ;
Drchal, V ;
Korzhavyi, P ;
Turek, I .
PHYSICAL REVIEW LETTERS, 2004, 93 (13) :137202-1
[7]   Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature [J].
Chen, L. ;
Yan, S. ;
Xu, P. F. ;
Lu, J. ;
Wang, W. Z. ;
Deng, J. J. ;
Qian, X. ;
Ji, Y. ;
Zhao, J. H. .
APPLIED PHYSICS LETTERS, 2009, 95 (18)
[8]   Properties of Ga1-xMnxAs with high Mn composition (x>0.1) [J].
Chiba, D. ;
Nishitani, Y. ;
Matsukura, F. ;
Ohno, H. .
APPLIED PHYSICS LETTERS, 2007, 90 (12)
[9]   MAGNETIZATION STUDIES OF (GETE)1-X(MNTE)X PSEUDOBINARY ALLOYS [J].
COCHRANE, RW ;
PLISCHKE, M ;
STROMOLS.JO .
PHYSICAL REVIEW B, 1974, 9 (07) :3013-3021
[10]   Ab initio description of the diluted magnetic semiconductor Ga1-xMnxAs:: Ferromagnetism, electronic structure, and optical response -: art. no. 233310 [J].
Craco, L ;
Laad, MS ;
Müller-Hartmann, E .
PHYSICAL REVIEW B, 2003, 68 (23)