High quality AlGaN grown on ELO AlN/sapphire templates

被引：89

作者：

Zeimer, U. ^{[1
]}

Kueller, V. ^{[1
]}

Knauer, A. ^{[1
]}

Mogilatenko, A. ^{[1
]}

Weyers, M. ^{[1
]}

Kneissl, M. ^{[1
,2
]}

机构：

[1] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, D-12489 Berlin, Germany

[2] Tech Univ Berlin, Inst Festkorperphys, D-10632 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2013年 / 377卷

关键词：

Characterization; Defects; Epitaxial lateral overgrowth; Metalorganic chemical vapor deposition; AlGaN; Light emitting diodes; EPITAXIAL LATERAL OVERGROWTH; ALN;

D O I：

10.1016/j.jcrysgro.2013.04.041

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The defect structure and the homogeneity of 1-3 mu m thick AlxGa1-xN layers grown on epitaxially laterally overgrown (ELO) AlN on patterned AlN/sapphire templates have been investigated in dependence on the miscut direction of the c-plane sapphire substrates, the etching depth into the sapphire and the Al concentration. It was found that shallowly etched AlN/sapphire templates with a 0.25 degrees miscut toward the a-plane provide a smooth surface of ELO AlN and therefore a good Al homogeneity in the overgrown Al0.8Ga0.2N layer. The threading dislocation density in these layers is as low as 5 x 10(8) cm(-2). (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：32 / 36

页数：5

共 15 条

[1] Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells [J].

Ban, Kazuhito ;

Yamamoto, Jun-ichi ;

Takeda, Kenichiro ;

Ide, Kimiyasu ;

Iwaya, Motoaki ;

Takeuchi, Tetsuya ;

Kamiyama, Satoshi ;

Akasaki, Isamu ;

Amano, Hiroshi .

APPLIED PHYSICS EXPRESS, 2011, 4 (05)

[2]

Bottcher T, 2002, THESIS U BREMEN GERM

[3]

Chen C., 2006, APPL PHYS LETT, V89

[4] ATOMIC VIEW OF SURFACE SELF-DIFFUSION - TUNGSTEN ON TUNGSTEN [J].

EHRLICH, G ;

HUDDA, FG .

JOURNAL OF CHEMICAL PHYSICS, 1966, 44 (03) :1039-&

[5] Fabrication of a low threading dislocation density ELO-AlN template for application to deep-UV LEDs [J].

Hirayama, Hideki ;

Fujikawa, Sachie ;

Norimatsu, Jun ;

Takano, Takayoshi ;

Tsubaki, Kenji ;

Kamata, Norihiko .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 :S356-S359

[6] Epitaxial lateral overgrowth of AlxGa1-xN (x > 0.2) on sapphire and its application to UV-B-light-emitting devices [J].

Iida, Kazuyoshi ;

Kawashima, Takeshi ;

Iwaya, Motoaki ;

Kamiyama, Satoshi ;

Amano, Hiroshi ;

Akasaki, Isamu ;

Bandoh, Akira .

JOURNAL OF CRYSTAL GROWTH, 2007, 298 (SPEC. ISS) :265-267

[7] Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers [J].

Imura, Masataka ;

Nakano, Kiyotaka ;

Narita, Gou ;

Fujimoto, Naoki ;

Okada, Narihito ;

Balakrishnan, Krishnan ;

Iwaya, Motoaki ;

Kamiyama, Satoshi ;

Amano, Hiroshi ;

Akasaki, Isamu ;

Noro, Tadashi ;

Takagi, Takashi ;

Bandoh, Akira .

JOURNAL OF CRYSTAL GROWTH, 2007, 298 (SPEC. ISS) :257-260

[8] AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates [J].

Knauer, A. ;

Kueller, V. ;

Zeimer, U. ;

Weyers, M. ;

Reich, C. ;

Kneissl, M. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2013, 210 (03) :451-454

[9] Advances in group III-nitride-based deep UV light-emitting diode technology [J].

Kneissl, M. ;

Kolbe, T. ;

Chua, C. ;

Kueller, V. ;

Lobo, N. ;

Stellmach, J. ;

Knauer, A. ;

Rodriguez, H. ;

Einfeldt, S. ;

Yang, Z. ;

Johnson, N. M. ;

Weyers, M. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 26 (01)

[10] AlGaN photodetectors for the UV-C spectral region on planar and epitaxial laterally overgrown AlN/sapphire templates [J].

Knigge, A. ;

Brendel, M. ;

Brunner, F. ;

Einfeldt, S. ;

Knauer, A. ;

Kueller, V. ;

Weyers, M. .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3, 2013, 10 (03) :294-297

← 1 2 →