Optical Response of Si/Ge superlattices with embedded Ge dots

被引：0

作者：

Kalem, Seref ^{[1
]}

Arthursson, Orjan ^{[2
]}

Werner, Peter ^{[3
]}

机构：

[1] Sci & Technol Council Turkey, Natl Res Inst Elect & Cryptol, TR-41470 Gebze, Kocaeli, Turkey

[2] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Gothenburg, Sweden

[3] Max Planck Inst, Dept Expt Phys, Halle, Saale, Germany

来源：

2012 PHOTONICS GLOBAL CONFERENCE (PGC) | 2012年

关键词：

Silicon-germanium superlattices; electronic band structure; germanium dots; interdiffusion model; spectroscopic ellipsometry; STRAINED GE/SI SUPERLATTICES; SPECTROSCOPIC ELLIPSOMETRY; LAYER SUPERLATTICES; RAMAN-SCATTERING; PHOTOLUMINESCENCE; TRANSITIONS; SI1-XGEX; SILICON; SI;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method was provided for treating the optical response of Si/Ge superlartices (SL) with embedded Ge dots. Spectroscopic ellipsometry (SE) measurement at room temperature was used to investigate optical and electronic properties of Si/Ge SL which were grown on silicon (Si) wafers having < 111 > crystallographic orientation. The results of the SE analysis between 1.2 eV and 5.2 eV indicate that the SL system can effectively be described using interdiffusion/intermixing model by assuming a multicrystalline Si and Si1-xGex intermixing layers. The optical transitions exhibit Si, Ge and alloying related critical points.

引用

页数：4

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