Non-volatile data storage in HfO2-based ferroelectric FETs

The ferroelectric behavior of capacitors based on hafnium oxide dielectrics is reported. Thin films of 7-30 nm thickness were found to exhibit ferroelectric polarization-voltage hysteresis loops when integrated into TiN-based metal-insulatormetal capacitors. A remanent polarization up to 25 mu C/cm(2) and a coercive field of about 1 MV/cm was observed when Si: HfO2 was used as a ferroelectric material. Switching times of 10 ns were demonstrated and the ferroelectric properties were verified in the temperature range from 80 K to 470 K. N-channel MFIS-FETs (Metal-Ferroelectric-Insulator-SemiconductorField-Effect Transistors) with poly-Si/TiN/Si:HfO2/SiO2/Si gate stack with a gate length equal or below 260 nm were successfully fabricated. The switching characteristics, endurance and retention properties were analyzed. A memory window of 1.2 V was obtained. Endurance performance of up to 10(4) cycles was verified. Retention characteristics were measured and 10 years data retention was extrapolated at 25 degrees C and 150 degrees C.